| No. |
Part Name |
Description |
Manufacturer |
| 301 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
| 302 |
BC338 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 303 |
BC338 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 304 |
BC338 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Vces = 30V, Vceo= 25V, Vebo = 5V, Pc = 625mW, Ic = 800mA. |
USHA India LTD |
| 305 |
BC547A |
Switching and Applications |
Fairchild Semiconductor |
| 306 |
BC547C |
Switching and Applications |
Fairchild Semiconductor |
| 307 |
BC548 |
Switching and Applications |
Fairchild Semiconductor |
| 308 |
BC549 |
Switching and Applications |
Fairchild Semiconductor |
| 309 |
BC549 |
Transistor. Switching and AF ampplifier. Low noise. Vcbo = 30V, Vceo= 30V, Vebo = 5V, Pc = 500mW, Ic = 100mA. |
USHA India LTD |
| 310 |
BC550 |
Switching and Applications |
Fairchild Semiconductor |
| 311 |
BC550 |
Transistor. Switching and AF amplifier. Low noise. Vcbo = 50V, Vceo= 45V, Vebo = 5V, Pc = 500mW, Ic = 100mA. |
USHA India LTD |
| 312 |
BC556 |
PNP Silicon Epitaxial Planar Transistor for switching and AF applications���� |
Semtech |
| 313 |
BC556 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -80V, Vceo= -65V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 314 |
BC557 |
PNP Silicon Epitaxial Planar Transistor for switching and AF applications |
Semtech |
| 315 |
BC557 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 316 |
BC558 |
PNP Silicon Epitaxial Planar Transistor for switching and AF applications |
Semtech |
| 317 |
BC558 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 318 |
BC559 |
PNP Silicon Epitaxial Planar Transistor for switching and AF applications |
Semtech |
| 319 |
BC559 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 320 |
BC560 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 321 |
BC635 |
Transistor. Switching and amplifier applications. Vcer = 45V, Vces = 45V, Vceo= 45V, Vebo = 5V, Pc = 1W, Ic = 1A. |
USHA India LTD |
| 322 |
BC636 |
Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 323 |
BC637 |
Transistor. Switching and amplifier applications. Vcer = 60V, Vces = 60V, Vceo= 60V, Vebo = 5V, Pc = 1W, Ic = 1A. |
USHA India LTD |
| 324 |
BC638 |
Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 325 |
BC640 |
Transistor. Switching and amplifier applications. Vcer = -100V, Vces = -100V, Vceo = -80V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 326 |
BC807-45 |
45V; PNP surface mount transistor. For switching and AF amplifier applications |
Diodes |
| 327 |
BCM8212 |
Transceiver with Internal Loop Timing and Phase Detector |
Broadcom |
| 328 |
BCV61 |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 329 |
BCV61A |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 330 |
BCV61B |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
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