| No. |
Part Name |
Description |
Manufacturer |
| 301 |
1N5908 |
TRANSIL |
SGS Thomson Microelectronics |
| 302 |
1N5908 |
TRANSIL |
SGS Thomson Microelectronics |
| 303 |
1N5908 |
TRANSIL |
ST Microelectronics |
| 304 |
1N5908RL |
TRANSIL |
ST Microelectronics |
| 305 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 306 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 307 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
ST Microelectronics |
| 308 |
1N6264 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 309 |
1N6265 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 310 |
1N6266 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 311 |
1N6640U |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
| 312 |
1N6640U01D |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
| 313 |
1N6640U02D |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
| 314 |
1N6640UD1 |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
| 315 |
1N6642U |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 316 |
1N6642U01D |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 317 |
1N6642U02D |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 318 |
1N6642UD1 |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 319 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 320 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 321 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 322 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 323 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 324 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 325 |
2028-771196-000 |
Synchronous rectification with inhibit, 0.7 A, 1.7 MHz adjustable, step-down switching regulator |
ST Microelectronics |
| 326 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 327 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 328 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 329 |
210007039-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 330 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
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