| No. |
Part Name |
Description |
Manufacturer |
| 301 |
1N916A |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 302 |
1N916B |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 303 |
1S-144 |
Mixer Protection diode |
TOSHIBA |
| 304 |
1S130 |
Diffused silicon diode 50V, color code brown-orange-black |
Texas Instruments |
| 305 |
1S131 |
Diffused silicon diode 100V, color code brown-orange-brown |
Texas Instruments |
| 306 |
1S132 |
Diffused silicon diode 200V, color code brown-orange-red |
Texas Instruments |
| 307 |
1S134 |
Diffused silicon diode 400V, color code brown-orange-yellow |
Texas Instruments |
| 308 |
1S136 |
Diffused silicon diode 600V, color code brown-orange-blue |
Texas Instruments |
| 309 |
1S138 |
Diffused silicon diode 800V, color code brown-orange-gray |
Texas Instruments |
| 310 |
1S144 |
Mixer Protection diode |
TOSHIBA |
| 311 |
1S144 |
Meter-protection Diode |
TOSHIBA |
| 312 |
1S144 |
Silicon Alloy junction meter protection diode |
TOSHIBA |
| 313 |
1S1920 |
Silicon Diffused Junction Diode used for TV Horizontal Deflection Damper |
Hitachi Semiconductor |
| 314 |
1S1921A |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V |
Hitachi Semiconductor |
| 315 |
1S1921B |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V |
Hitachi Semiconductor |
| 316 |
1S1921C |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V |
Hitachi Semiconductor |
| 317 |
1S1921D |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V |
Hitachi Semiconductor |
| 318 |
1S1921E |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V |
Hitachi Semiconductor |
| 319 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
| 320 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 321 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 322 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 323 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 324 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 325 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 326 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 327 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 328 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 329 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 330 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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