| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2SC5193-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
NEC |
| 302 |
2SC5194 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 303 |
2SC5194-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 304 |
2SC5194-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 305 |
2SC5195 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 306 |
2SC5195-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 307 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
| 308 |
2SC5369-T1 |
Microwave noise reduced amplifier/high gain amplifier |
NEC |
| 309 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 310 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 311 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 312 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 313 |
2SD1391 |
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS |
ST Microelectronics |
| 314 |
2SD1398 |
RF & microwave transistor 850-960 MHz applications, 24 volts, 53W |
SGS Thomson Microelectronics |
| 315 |
2SD1398 |
RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS |
ST Microelectronics |
| 316 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
| 317 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
ST Microelectronics |
| 318 |
3001 |
MICROWAVE CW BIPOLAR |
Acrian |
| 319 |
3001-2 |
1 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 320 |
3003 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 321 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 322 |
3003-2 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 323 |
3003-3 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 324 |
3005 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 325 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 326 |
3005-2 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 327 |
3005-3 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 328 |
38NQ52 |
Subminiature microwave detection diode |
Tesla Elektronicke |
| 329 |
38NQ52A |
Subminiature microwave detection diode |
Tesla Elektronicke |
| 330 |
39NQ52A |
Subminiature microwave detection diode, color white |
Tesla Elektronicke |
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