| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2SD1391 |
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS |
ST Microelectronics |
| 302 |
2SD1398 |
RF & microwave transistor 850-960 MHz applications, 24 volts, 53W |
SGS Thomson Microelectronics |
| 303 |
2SD1398 |
RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS |
ST Microelectronics |
| 304 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
| 305 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
ST Microelectronics |
| 306 |
3001 |
MICROWAVE CW BIPOLAR |
Acrian |
| 307 |
3001-2 |
1 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 308 |
3003 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 309 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 310 |
3003-2 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 311 |
3003-3 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 312 |
3005 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 313 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 314 |
3005-2 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 315 |
3005-3 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 316 |
38NQ52 |
Subminiature microwave detection diode |
Tesla Elektronicke |
| 317 |
38NQ52A |
Subminiature microwave detection diode |
Tesla Elektronicke |
| 318 |
39NQ52A |
Subminiature microwave detection diode, color white |
Tesla Elektronicke |
| 319 |
39NQ52B |
Subminiature microwave detection diode, color albastru |
Tesla Elektronicke |
| 320 |
39NQ52C |
Subminiature microwave detection diode, color red |
Tesla Elektronicke |
| 321 |
4000 |
Common base silicon NPN microwave power transistor featuring a unique Microgrid™ structure |
SGS Thomson Microelectronics |
| 322 |
4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 323 |
4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 324 |
40NQ70 |
Point-contact microwave detection diode |
Tesla Elektronicke |
| 325 |
672-1175M |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
etc |
| 326 |
672-3866 |
RF & MICROWAVE TRANSISTORS LOW POWER TRANSISTORS |
etc |
| 327 |
672-3866A |
RF & MICROWAVE TRANSISTORS LOW POWER TRANSISTORS |
etc |
| 328 |
83000 |
3.0GHz 0.5W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 329 |
83001 |
3.0GHz 1.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 330 |
9-0-180 |
PIN diode Microwave Phase Shifter |
CCSIT-CE |
| | | |
