No. |
Part Name |
Description |
Manufacturer |
301 |
2SD382 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
302 |
2SD526 |
Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications |
TOSHIBA |
303 |
2SD553 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
304 |
2SD600 |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
305 |
2SD600K |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
306 |
2SD608 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
307 |
2SD612 |
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
308 |
2SD612K |
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
309 |
2SD878 |
HIGH POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
310 |
2SJ200 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application |
TOSHIBA |
311 |
2SJ201 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application |
TOSHIBA |
312 |
2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
313 |
2SJ338 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
314 |
2SJ440 |
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE - AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
315 |
2SJ440-Y |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) |
TOSHIBA |
316 |
2SK1529 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
317 |
2SK1530 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
318 |
2SK2013 |
Field Effect Transistor Silicon N Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
319 |
2SK2162 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
320 |
2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION |
TOSHIBA |
321 |
2SK2467-Y |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
322 |
30A01C |
PNP Bipolar Transistor for Audio Power Amplifier Applications |
ON Semiconductor |
323 |
AM55-0004 |
1.8-2 GHz, 250 mW linear power amplifier and T/R switch |
MA-Com |
324 |
AM55-0004 |
250 mW Linear Power Amplifier and T/R Switch 1.8 - 2.0 GHz |
Tyco Electronics |
325 |
AM55-0004RTR |
1.8-2 GHz, 250 mW linear power amplifier and T/R switch |
MA-Com |
326 |
AM55-0004RTR |
250 mW Linear Power Amplifier and T/R Switch 1.8 - 2.0 GHz |
Tyco Electronics |
327 |
AM55-0004SMB |
1.8-2 GHz, 250 mW linear power amplifier and T/R switch |
MA-Com |
328 |
AM55-0004SMB |
250 mW Linear Power Amplifier and T/R Switch 1.8 - 2.0 GHz |
Tyco Electronics |
329 |
AM55-0004TR |
1.8-2 GHz, 250 mW linear power amplifier and T/R switch |
MA-Com |
330 |
AM55-0004TR |
250 mW Linear Power Amplifier and T/R Switch 1.8 - 2.0 GHz |
Tyco Electronics |
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