No. |
Part Name |
Description |
Manufacturer |
301 |
2SB1061 |
Silicon PNP Triple Diffused Low Frequency Power Amplifier |
Hitachi Semiconductor |
302 |
2SB1063 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
303 |
2SB1067 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
304 |
2SB1071 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
305 |
2SB1071A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
306 |
2SB1077 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 |
Hitachi Semiconductor |
307 |
2SB1101 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
308 |
2SB1102 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
309 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
310 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
311 |
2SB1122 |
PNP Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Applications |
SANYO |
312 |
2SB1133 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
313 |
2SB1148 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
314 |
2SB1148A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
315 |
2SB1154 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
316 |
2SB1156 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
317 |
2SB1163 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Unknow |
318 |
2SB1169 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
319 |
2SB1169A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
320 |
2SB1172 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
321 |
2SB1172A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
322 |
2SB1173 |
AF Power Amplifier Complementary Pair with 2SD1743, 2SD1743A |
Panasonic |
323 |
2SB1173A |
AF Power Amplifier Complementary Pair with 2SD1743, 2SD1743A |
Panasonic |
324 |
2SB1174 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
325 |
2SB1175 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
326 |
2SB1176 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
327 |
2SB1179 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
328 |
2SB1179A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
329 |
2SB1180 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
330 |
2SB1180A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| | | |