| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 302 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 303 |
2SB1122 |
PNP Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Applications |
SANYO |
| 304 |
2SB1133 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 305 |
2SB1148 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 306 |
2SB1148A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 307 |
2SB1154 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 308 |
2SB1156 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 309 |
2SB1163 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Unknow |
| 310 |
2SB1169 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 311 |
2SB1169A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 312 |
2SB1172 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 313 |
2SB1172A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 314 |
2SB1173 |
AF Power Amplifier Complementary Pair with 2SD1743, 2SD1743A |
Panasonic |
| 315 |
2SB1173A |
AF Power Amplifier Complementary Pair with 2SD1743, 2SD1743A |
Panasonic |
| 316 |
2SB1174 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 317 |
2SB1175 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 318 |
2SB1176 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 319 |
2SB1179 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 320 |
2SB1179A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 321 |
2SB1180 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 322 |
2SB1180A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 323 |
2SB1193 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 324 |
2SB1250 |
For power amplification |
Panasonic |
| 325 |
2SB1251 |
For power amplification |
Panasonic |
| 326 |
2SB1253 |
Silicon PNP epitaxial planar type Darlington(For power amplification) |
Panasonic |
| 327 |
2SB1266 |
PNP Triple Diffused Planar Type Silicon Transistors AF Power Amplifier Applications |
SANYO |
| 328 |
2SB1274 |
60V/3A Low-Frequency Power Amplifier Applications |
SANYO |
| 329 |
2SB1299 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 330 |
2SB1314 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION |
Mitsubishi Electric Corporation |
| | | |
