| No. |
Part Name |
Description |
Manufacturer |
| 301 |
BF679S |
Epitaxial planar PNP transistor intended for use as UHF-VHF amplifier up to 900MHz |
SGS-ATES |
| 302 |
BF680 |
Epitaxial planar PNP transistor intended for use in TV varicap tuners as mixer-oscillator stage up to 900MHz |
SGS-ATES |
| 303 |
BF680A |
Epitaxial planar PNP transistor intended for use in TV varicap tuners as mixer-oscillator stage up to 900MHz |
SGS-ATES |
| 304 |
BF680H |
Epitaxial planar PNP transistor intended for use as UHF oscillator |
SGS-ATES |
| 305 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 306 |
BFR90A |
NPN silicon planar epitaxial transistor intended for use in VHF and UHF wideband amplifiers |
Philips |
| 307 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
| 308 |
BFT66S |
Epitaxial planar NPN transistor intended for extremely low-noise telecom applications |
SGS-ATES |
| 309 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
| 310 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 311 |
BFT96 |
Epitaxial planar PNP transistor intended for use as driver or output stage in MATV application up to 800MHz |
SGS-ATES |
| 312 |
BFW16A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 313 |
BFW17A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 314 |
BFW45 |
NPN silicon transistor intended for the output stage of the horizontal deflection amplifier |
ICCE |
| 315 |
BFW92A |
Silicon planar epitaxial NPN transistor intended for use in amplifiers in the 40-860MHz range |
Philips |
| 316 |
BLV80/28 |
VHF Power NPN silicon planar epitaxial transistor intended for use in base stations in the VHF mobile radio band |
Philips |
| 317 |
BM3189 |
βM3189 Circuit for intermediate frequency MF, HI FI |
IPRS Baneasa |
| 318 |
BPT1819E03 |
High Performance Silicon Bipolar Transistor Intended |
etc |
| 319 |
BQ2063 |
Li-Ion SBS 1.1 Compliant Gas Gauge With Protector Interface |
Texas Instruments |
| 320 |
BQ2063DBQ |
Li-Ion SBS 1.1 Compliant Gas Gauge With Protector Interface |
Texas Instruments |
| 321 |
BQ2063DBQG4 |
Li-Ion SBS 1.1 Compliant Gas Gauge With Protector Interface 28-SSOP 0 to 70 |
Texas Instruments |
| 322 |
BQ2063DBQR |
Li-Ion SBS 1.1 Compliant Gas Gauge With Protector Interface |
Texas Instruments |
| 323 |
BU126 |
Silicon NPN triple diffused MESA high voltage power transistor intended for use in the switched mode power supply of television receivers |
TOSHIBA |
| 324 |
BUD42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 325 |
BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 326 |
BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 327 |
C9835 |
Low-EMI Clock Generator for Intel Mobile 133-MHz/3 SO-DIMM Chipset Systems |
Cypress |
| 328 |
C9835CT |
Low-EMI Clock Generator for Intel Mobile 133-MHz/3 SO-DIMM Chipset Systems |
Cypress |
| 329 |
C9835CTT |
Low-EMI Clock Generator for Intel Mobile 133-MHz/3 SO-DIMM Chipset Systems |
Cypress |
| 330 |
C9835CY |
Low-EMI Clock Generator for Intel Mobile 133-MHz/3 SO-DIMM Chipset Systems |
Cypress |
| | | |
