| No. |
Part Name |
Description |
Manufacturer |
| 301 |
MR2940 |
Provision for Standby mode operation Partial Resonance Power Supply IC Module |
Shindengen |
| 302 |
MXD1815UR29 |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 303 |
MXD1815UR29+ |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 304 |
MXD1815UR29+T |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 305 |
MXD1815XR29+ |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 306 |
MXD1816UR29 |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 307 |
MXD1816UR29+ |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 308 |
MXD1816UR29+T |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 309 |
MXD1816XR29 |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 310 |
MXD1816XR29+ |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 311 |
MXD1816XR29+T |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 312 |
MXD1817UR29+ |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 313 |
MXD1817UR29+T |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 314 |
MXD1817XR29+ |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 315 |
MXD1818UR29+ |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 316 |
MXD1818UR29+T |
Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 |
MAXIM - Dallas Semiconductor |
| 317 |
PB-IRFR2905Z |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 318 |
PB-IRLR2905 |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 319 |
PB-IRLR2905Z |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 320 |
PB-IRLR2908 |
Leaded 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 321 |
PBYR290CT |
Schottky barrier double diode. Repetitive peak reverse voltage 90 V. |
Philips |
| 322 |
PL611S-19-R29GC |
Clock and Timing - Clock Generation |
Microchip |
| 323 |
PL611S-19-R29GC-R |
Clock and Timing - Clock Generation |
Microchip |
| 324 |
PMR290UNE |
20 V, 700 mA N-channel Trench MOSFET |
Nexperia |
| 325 |
PMR290UNE |
20 V, 700 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 326 |
PMR290XN |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 327 |
PMR290XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 328 |
PMR290XN |
N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 329 |
PMR290XN |
PMR290XN; N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 330 |
PMR290XN |
PMR290XN; N-channel uTrenchmos (tm) extremely low level FET |
Philips |
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