| No. |
Part Name |
Description |
Manufacturer |
| 301 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 302 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 303 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 304 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 305 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 306 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 307 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 308 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 309 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 310 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 311 |
BF420 |
NPN Silicon Transistors With High Reverse Voltage (NPN Silicon Transistors With High Reverse Voltage) |
Siemens |
| 312 |
BF420 |
NPN Silicon Transistors With High Reverse Voltage (NPN Silicon Transistors With High Reverse Voltage) |
Siemens |
| 313 |
BF422 |
NPN Silicon Transistors With High Reverse Voltage (NPN Silicon Transistors With High Reverse Voltage) |
Siemens |
| 314 |
BF422 |
NPN Silicon Transistors With High Reverse Voltage (NPN Silicon Transistors With High Reverse Voltage) |
Siemens |
| 315 |
BFY65 |
Silicon NPN epitaxial planar transistors with high collector base voltage for nixie drivers |
AEG-TELEFUNKEN |
| 316 |
BFY80 |
Silicon NPN epitaxial planar transistors with high collector base voltage for nixie drivers |
AEG-TELEFUNKEN |
| 317 |
BSV51 |
Silicon NPN epitaxial planar transistor with high reverse collector base voltage, especially for indicator tube driver stages and for relaise driver stages |
AEG-TELEFUNKEN |
| 318 |
BSY92 |
Silicon NPN planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 319 |
BSY93 |
Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 320 |
BU126 |
NPN Silicon Power Transistor with a high reverse voltage |
Siemens |
| 321 |
BU208 |
NPN Silicon Power Transistor with 1500V reverse voltage |
Siemens |
| 322 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 323 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 324 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 325 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 326 |
BY228GP |
Clamper / Damper Glass Passivated Rectifier, Forward Current 2.5A, Reverse Voltage 1500V |
Vishay |
| 327 |
BY448GP |
Miniature Clamper/Damper Glass Passivated Rectifier Forward Current 1.5A Reverse Voltage 1650V |
Vishay |
| 328 |
BYS459-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns |
Vishay |
| 329 |
BYS459-1500S |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 10A Reverse Recovery Time 220ns |
Vishay |
| 330 |
BYS459B-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns |
Vishay |
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