No. |
Part Name |
Description |
Manufacturer |
301 |
2N3858A |
SILICON TRANSISTORS |
General Electric Solid State |
302 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
303 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
304 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
305 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
306 |
2N3866 |
Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
307 |
2N3870 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
308 |
2N3870 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
309 |
2N3871 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
310 |
2N3871 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
311 |
2N3872 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
312 |
2N3872 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
313 |
2N3873 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
314 |
2N3873 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
315 |
2N3878 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
316 |
2N3879 |
High speed, epitaxial collector silicon N-P-N planar transistor. |
General Electric Solid State |
317 |
2N3896 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
318 |
2N3896 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
319 |
2N3897 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
320 |
2N3897 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
321 |
2N3898 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
322 |
2N3898 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
323 |
2N3899 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
324 |
2N3899 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
325 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
326 |
2N3904 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
327 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
328 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
329 |
2N3996 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
330 |
2N3997 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
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