| No. |
Part Name |
Description |
Manufacturer |
| 301 |
1N4913 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 302 |
1N4913A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 303 |
1N4913AE3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 304 |
1N4913E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 305 |
1N4914 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 306 |
1N4914A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 307 |
1N4914AE3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 308 |
1N4914E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 309 |
1N4915 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 310 |
1N4915A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 311 |
1N4915AE3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 312 |
1N4915E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 313 |
1N4933 |
19.2 volt (nominal zener voltage +-5%) temperature compensated zener reference diode |
Compensated Devices Incorporated |
| 314 |
1N4933A |
19.2 volt (nominal zener voltage +-5%) temperature compensated zener reference diode |
Compensated Devices Incorporated |
| 315 |
1N821 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 316 |
1N821 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 317 |
1N821 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 318 |
1N821-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 319 |
1N821-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 320 |
1N821A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 321 |
1N821A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 322 |
1N821A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 323 |
1N821A |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
| 324 |
1N821A-1 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 325 |
1N821A-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 326 |
1N821AUR-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 327 |
1N821UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 328 |
1N821UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 329 |
1N821UR-1 |
TEMPERATURE COMPENSATED ZENER DIODES |
Compensated Devices Incorporated |
| 330 |
1N821UR-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| | | |
