| No. |
Part Name |
Description |
Manufacturer |
| 301 |
FP410L(4X80)FM |
Double Differential Magneto Resistor |
Infineon |
| 302 |
FP410L(4X80)FM |
Double Differential Magneto Resistor |
Siemens |
| 303 |
FP410L(4X80)FM |
Double Differential Magneto Resistor |
Siemens |
| 304 |
FP410L(4X80)FME6797 |
Double Differential Magneto Resistor |
Infineon |
| 305 |
FP410L(4X80)FME8232 |
Double Differential Magneto Resistor |
Infineon |
| 306 |
FP420L90 |
Double Differential Magneto Resistor |
Siemens |
| 307 |
FP420L90B |
Double Differential Magneto Resistor |
Infineon |
| 308 |
FP420L90BE9113 |
Double Differential Magneto Resistor |
Infineon |
| 309 |
FP425L90E9112 |
Double Differential Magneto Resistor |
Infineon |
| 310 |
GS8170DD18C-250 |
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 311 |
GS8170DD18C-250I |
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 312 |
GS8170DD18C-300 |
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 313 |
GS8170DD18C-300I |
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 314 |
GS8170DD18C-333 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 315 |
GS8170DD18C-333I |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 316 |
GS8170DD36C-250 |
250MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 317 |
GS8170DD36C-250I |
250MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 318 |
GS8170DD36C-300 |
300MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 319 |
GS8170DD36C-300I |
300MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 320 |
GS8170DD36C-333 |
333MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 321 |
GS8170DD36C-333I |
333MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 322 |
HBAT54 |
Silicon Schottky Barrier Double Diodes |
Hi-Sincerity Microelectronics |
| 323 |
HBAT54A |
Silicon Schottky Barrier Double Diodes |
Hi-Sincerity Microelectronics |
| 324 |
HBAT54C |
Silicon Schottky Barrier Double Diodes |
Hi-Sincerity Microelectronics |
| 325 |
HBAT54S |
Silicon Schottky Barrier Double Diodes |
Hi-Sincerity Microelectronics |
| 326 |
HYB18T1G160AF-3.7 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
| 327 |
HYB18T1G160AF-5 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
| 328 |
HYB18T1G400AF-3.7 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
| 329 |
HYB18T1G400AF-5 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
| 330 |
HYB18T1G800AF-3.7 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
| | | |
