No. |
Part Name |
Description |
Manufacturer |
301 |
ASM3P2969A-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
302 |
ASM3P2969A-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
303 |
ASM3P2969A-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
304 |
ASM3P2969A-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
305 |
ASM3P2969AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
306 |
ASM3P2969AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
307 |
ASM3P2969AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
308 |
ASM3P2969AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
309 |
ASM3P2969AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
310 |
ASM3P5821A |
3.3 V, 20 MHz to 34 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
311 |
ASM3P623S05 |
Timing-Safe™ Peak EMI Reduction IC |
ON Semiconductor |
312 |
ASM3X2105AFS |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
313 |
ASM3X2105AFSR |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
314 |
ASM3X2105AFT |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
315 |
ASM3X2105AFTR |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
316 |
AT91RM9200 |
The AT91RM9200 features a 200 MIPS ARM920T processor with 16K-byte instruction and 16K-byte data cache memories, 16K bytes of SRAM, 128K bytes of ROM, External Bus Interface featuring SDRAM, Burst Flash and Static Memory Controllers, USB D |
Atmel |
317 |
B120_B |
20V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
318 |
B130_B |
30V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
319 |
B140_B |
40V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
320 |
B150_B |
50V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
321 |
B160_B |
60V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
322 |
B220_A |
20V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
323 |
B230_A |
30V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
324 |
B240_A |
40V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
325 |
B250_A |
50V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
326 |
B260_A |
60V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
327 |
B320_A_B |
20V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
328 |
B330_A_B |
30V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
329 |
B340_A_B |
40V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
330 |
B350_A_B |
50V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
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