| No. |
Part Name |
Description |
Manufacturer |
| 301 |
BULD50SL |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
| 302 |
BULD85KC |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
| 303 |
BUPD1520 |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
| 304 |
BUT11 |
NPN SILICON POWER TRANSISTOR |
Power Innovations |
| 305 |
BUV47 |
NPN SILICON POWER TRANSISTORS |
Power Innovations |
| 306 |
BUV47A |
NPN SILICON POWER TRANSISTORS |
Power Innovations |
| 307 |
BUV48 |
NPN SILICON POWER TRANSISTORS |
Power Innovations |
| 308 |
BUV48A |
NPN SILICON POWER TRANSISTORS |
Power Innovations |
| 309 |
BUX84 |
NPN SILICON POWER TRANSISTOR |
Power Innovations |
| 310 |
C4880-80-12A |
10-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
| 311 |
C4880-80-14A |
10-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
| 312 |
C4880-80-22A |
12-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
| 313 |
C4880-80-24A |
12-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
| 314 |
CR02 |
LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 315 |
CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 316 |
CR02AM-8A |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 317 |
CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 318 |
CR04 |
LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 319 |
CR04AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 320 |
CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 321 |
CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 322 |
CR10C |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 323 |
CR10CY |
HIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 324 |
CR12AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 325 |
CR12BM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 326 |
CR20EY |
HIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 327 |
CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 328 |
CR2AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 329 |
CR2AM-8A |
LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 330 |
CR3AMZ |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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