| No. |
Part Name |
Description |
Manufacturer |
| 301 |
GS882Z36AB-225I |
225MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 302 |
GS882Z36AD-200 |
200MHz 6.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 303 |
GS882Z36AD-200I |
200MHz 6.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 304 |
GS882Z36AD-225 |
225MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 305 |
GS882Z36AD-225I |
225MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 306 |
GS882Z36BB-200 |
200MHz 6.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 307 |
GS882Z36BB-200I |
200MHz 6.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 308 |
GS882Z36BB-225 |
225MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 309 |
GS882Z36BB-225I |
225MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 310 |
GS882Z36BD-200 |
200MHz 6.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 311 |
GS882Z36BD-200I |
200MHz 6.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 312 |
GS882Z36BD-225 |
225MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 313 |
GS882Z36BD-225I |
225MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 314 |
GS882Z36BD-250 |
250MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 315 |
IRDCIP2005A-A |
1MHz 65A DC 80A Peak Dual Phase Sync Buck Converter Reference Design |
International Rectifier |
| 316 |
IRDCIP2005A-B |
500kHz 60A DC Sync Buck Converter Reference Design for High Efficiency Applications |
International Rectifier |
| 317 |
IRDCIP2005C-1 |
500kHz 60A Single Output Dual Phase Sync Buck Converter Reference Design |
International Rectifier |
| 318 |
LM5022-Q1 |
2.2MHz 60-V Low Side Controller for Boost, SEPIC and Flyback 10-VSSOP -40 to 125 |
Texas Instruments |
| 319 |
LM5022QDGSRQ1 |
2.2MHz 60-V Low Side Controller for Boost, SEPIC and Flyback 10-VSSOP -40 to 125 |
Texas Instruments |
| 320 |
LM5022QDGSTQ1 |
2.2MHz 60-V Low Side Controller for Boost, SEPIC and Flyback 10-VSSOP -40 to 125 |
Texas Instruments |
| 321 |
M68701H |
Silicon MOS FET Power Amplifier, 890-960MHz 6W FM /Digital Mobile |
Mitsubishi Electric Corporation |
| 322 |
M68701M |
Silicon MOS FET Power Amplifier, 860-915MHz 6W FM / Digital Mobile |
Mitsubishi Electric Corporation |
| 323 |
M68710UH |
RF POWER MODULE 470-520MHz 6V 2W FM PORTABLE RADIO |
Mitsubishi Electric Corporation |
| 324 |
M68710UL |
RF POWER MODULE 380-400MHz 6V 2W FM PORTABLE RADIO |
Mitsubishi Electric Corporation |
| 325 |
M68712N |
RF POWER MODULE 142-163MHz 6V 2W FM PORTABLE RADIO |
Mitsubishi Electric Corporation |
| 326 |
M68732SHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-520 MHz 6.7W FM PORTABLE |
Mitsubishi Electric Corporation |
| 327 |
MMBZ5233B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.0 V. Test current 20.0 mA. |
Chenyi Electronics |
| 328 |
MMBZ5234B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA. |
Chenyi Electronics |
| 329 |
MMBZ5235B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.8 V. Test current 20.0 mA. |
Chenyi Electronics |
| 330 |
MRW52602 |
Microwave Linear Power Transistor 3W 1-2GHz 6dB |
Motorola |
| | | |
