| No. |
Part Name |
Description |
Manufacturer |
| 3031 |
PSMN1R0-25YLD |
N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
| 3032 |
PSMN1R0-30YLD |
N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
| 3033 |
PSMN1R0-30YLD |
N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
NXP Semiconductors |
| 3034 |
PSMNR90-30BL |
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK |
Nexperia |
| 3035 |
PSMNR90-30BL |
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK |
NXP Semiconductors |
| 3036 |
PT7715 |
20-A 1.075V to 1.85V 5V-Input Programmable ISR |
Texas Instruments |
| 3037 |
PT7715A |
20-A 1.075V to 1.85V 5V-Input Programmable ISR |
Texas Instruments |
| 3038 |
PT7715C |
20-A 1.075V to 1.85V 5V-Input Programmable ISR |
Texas Instruments |
| 3039 |
PT7715N |
20-A 1.075V to 1.85V 5V-Input Programmable ISR |
Texas Instruments |
| 3040 |
PT7716 |
20-A 1.075V to 1.85V 3.3V-Input Programmable ISR |
Texas Instruments |
| 3041 |
PT7716A |
20-A 1.075V to 1.85V 3.3V-Input Programmable ISR |
Texas Instruments |
| 3042 |
PT7716C |
20-A 1.075V to 1.85V 3.3V-Input Programmable ISR |
Texas Instruments |
| 3043 |
PT7716N |
20-A 1.075V to 1.85V 3.3V-Input Programmable ISR |
Texas Instruments |
| 3044 |
PT8002A |
1.075 to 1.85V 60A, 5-V Input Multiphase Programmable ISR |
Texas Instruments |
| 3045 |
PT8002C |
1.075 to 1.85V 60A, 5-V Input Multiphase Programmable ISR |
Texas Instruments |
| 3046 |
PT8002N |
1.075 to 1.85V 60A, 5-V Input Multiphase Programmable ISR |
Texas Instruments |
| 3047 |
PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3048 |
PTF10009 |
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3049 |
PTF10031 |
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3050 |
PTF10052 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3051 |
PTF10136 |
6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3052 |
PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3053 |
PU200-13B |
Switching power supply, 200W. Output #1: Vnom 15V, Imin 1.0A, Imax 13.4A. |
International Power Sources |
| 3054 |
PU200-13C |
Switching power supply, 200W. Output #1: Vnom 15V, Imin 1.0A, Imax 13.4A. |
International Power Sources |
| 3055 |
PVAZ172 |
HEXFET� Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V AC, 1.0A |
International Rectifier |
| 3056 |
PVI5013 |
PHOTOVOLTAIC ISOLATOR Solid-State Opto-Isolated MOSFET Gate Driver Dual-Channel 5V/ 1.0mA |
International Rectifier |
| 3057 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 3058 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 3059 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 3060 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
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