| No. |
Part Name |
Description |
Manufacturer |
| 3031 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 3032 |
2SK881 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 3033 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 3034 |
2SK932 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 3035 |
2SK937 |
N-Channel Junction Silicon FET High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3036 |
300EXD11 |
Silicon alloy diffused junction rectifier 2500V 300A |
TOSHIBA |
| 3037 |
300FXD11 |
Silicon alloy diffused junction rectifier 3000V 300A |
TOSHIBA |
| 3038 |
300LD11 |
Silicon alloy diffused junction rectifier 350A 800V |
TOSHIBA |
| 3039 |
300ND11 |
Silicon alloy diffused junction rectifier 350A 1000V |
TOSHIBA |
| 3040 |
300QD11 |
Silicon alloy diffused junction rectifier 350A 1200V |
TOSHIBA |
| 3041 |
300TD11 |
Silicon alloy diffused junction rectifier 350A 1500V |
TOSHIBA |
| 3042 |
300WD11 |
Silicon alloy diffused junction rectifier 350A 1800V |
TOSHIBA |
| 3043 |
300YD11 |
Silicon alloy diffused junction rectifier 350A 2000V |
TOSHIBA |
| 3044 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3045 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3046 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3047 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3048 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3049 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3050 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3051 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3052 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3053 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3054 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3055 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3056 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3057 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3058 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3059 |
30KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3060 |
30KW198 |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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