No. |
Part Name |
Description |
Manufacturer |
3031 |
HN1D03FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
3032 |
HN1J02FU |
Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
3033 |
HN1K02FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
3034 |
HN1K03FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
3035 |
HN1K04FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
3036 |
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications |
TOSHIBA |
3037 |
HN1K06FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
3038 |
HN1L02FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
3039 |
HN1L03FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
3040 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
3041 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
3042 |
HN2D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
3043 |
HN2D02FUTW1T1 |
Ultra High Speed Switching Diodes |
ON Semiconductor |
3044 |
HN2S01F |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
3045 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
3046 |
HN4B101J |
Power transistor for high-speed switching applications |
TOSHIBA |
3047 |
HN4B102J |
Power transistor for high-speed switching applications |
TOSHIBA |
3048 |
HN4K03JU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
3049 |
HR1A4 |
On-chip resistor PNP silicon epitaxial transistor For mid-speed switching |
NEC |
3050 |
HR1XXX |
On-chip resistor PNP silicon epitaxial transistor For mid-speed switching |
NEC |
3051 |
HSB124 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
3052 |
HSM221C |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
3053 |
HSM2838C |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
3054 |
HWS2352 |
GaAs MMIC SPDT terminated switch |
HEXAWAVE |
3055 |
HWS332 |
GaAs MMIC SPDT terminated switch |
HEXAWAVE |
3056 |
IDT77V400S156BC1 |
SwitchStarTM ATM Cell Based 8 x 8 1.2Gbps non-blocking Integrated Switching Memory |
IDT |
3057 |
IDT77V400S156DS1 |
SwitchStarTM ATM Cell Based 8 x 8 1.2Gbps non-blocking Integrated Switching Memory |
IDT |
3058 |
IR211 |
SLOTTED SWITCH 5mm GAP 9mm LEAD SPACING |
Fairchild Semiconductor |
3059 |
IR4007 |
30W Output DC-DC Integrated Switchers in a TO-220 (5-Leads) package |
International Rectifier |
3060 |
IRIS-A6131 |
INTEGRATED SWITCHER |
International Rectifier |
| | | |