| No. |
Part Name |
Description |
Manufacturer |
| 3031 |
BCR5AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3032 |
BCR5AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3033 |
BCR5KM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3034 |
BCR5KM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3035 |
BCR5KM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3036 |
BCR5PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3037 |
BCR5PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3038 |
BCR5PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3039 |
BCR5PM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3040 |
BCR5PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3041 |
BCR6 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3042 |
BCR6AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3043 |
BCR6AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3044 |
BCR6AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3045 |
BCR6AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3046 |
BCR8 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3047 |
BCR8CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3048 |
BCR8CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3049 |
BCR8CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3050 |
BCR8CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3051 |
BCR8CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3052 |
BCR8CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3053 |
BCR8CS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3054 |
BCR8CS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3055 |
BCR8PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3056 |
BCR8PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3057 |
BCR8PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3058 |
BCR8PM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3059 |
BCR8PM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3060 |
BCR8PM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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