No. |
Part Name |
Description |
Manufacturer |
3031 |
SP6660EU/TR |
200mA Charge Pump Inverter or Doubler |
Sipex Corporation |
3032 |
SP6661 |
High Frequency 200mA Charge Pump Inverter or Doubler |
Sipex Corporation |
3033 |
SP6661EN |
High Frequency 200mA Charge Pump Inverter or Doubler |
Sipex Corporation |
3034 |
SP6661EN-L |
High Frequency 200mA Charge Pump Inverter or Doubler |
Sipex Corporation |
3035 |
SP6661EN-L/TR |
High Frequency 200mA Charge Pump Inverter or Doubler |
Sipex Corporation |
3036 |
SP6661EN/TR |
High Frequency 200mA Charge Pump Inverter or Doubler |
Sipex Corporation |
3037 |
SP6661EU |
High Frequency 200mA Charge Pump Inverter or Doubler |
Sipex Corporation |
3038 |
SP6661EU-L |
High Frequency 200mA Charge Pump Inverter or Doubler |
Sipex Corporation |
3039 |
SP6661EU-L/TR |
High Frequency 200mA Charge Pump Inverter or Doubler |
Sipex Corporation |
3040 |
SP6661EU/TR |
High Frequency 200mA Charge Pump Inverter or Doubler |
Sipex Corporation |
3041 |
SP6661UEB |
High Frequency 200mA Charge Pump Inverter or Doubler |
Sipex Corporation |
3042 |
STA400EP |
STA400EP IEEE 1149.4 Analog Test Access Device |
National Semiconductor |
3043 |
STA400MTEP |
STA400EP IEEE 1149.4 Analog Test Access Device |
National Semiconductor |
3044 |
STB4NC80Z-1 |
N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP I2PAK ZENER PROTECTED POWERMESH III MOSFET |
SGS Thomson Microelectronics |
3045 |
STB5NC90Z |
N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET |
ST Microelectronics |
3046 |
STB5NC90Z-1 |
N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK ZENER-PROTECTED POWERMESH III MOSFET |
SGS Thomson Microelectronics |
3047 |
STB5NC90Z-1 |
N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET |
ST Microelectronics |
3048 |
STB5NC90ZT4 |
N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET |
ST Microelectronics |
3049 |
STB7NC70Z-1 |
N-CHANNEL 700V 1.1OHM 6A TO-220 TO-220FP I2PAK ZENER PROTECTED POWERMESH III MOSFET |
SGS Thomson Microelectronics |
3050 |
STEVAL-CCA036V1 |
Demonstration board for single channel op-amp in SO8 package |
ST Microelectronics |
3051 |
STGB10H60DF |
Trench gate field-stop IGBT, H series 600 V, 10 A high speed |
ST Microelectronics |
3052 |
STGB15H60DF |
Trench gate field-stop IGBT, H series 600 V, 15 A high speed |
ST Microelectronics |
3053 |
STGB20H60DF |
600 V, 20 A high speed trench gate field-stop IGBT |
ST Microelectronics |
3054 |
STGB20V60DF |
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed |
ST Microelectronics |
3055 |
STGB20V60F |
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed |
ST Microelectronics |
3056 |
STGB30H60DF |
600 V, 30 A high speed trench gate field-stop IGBT |
ST Microelectronics |
3057 |
STGB30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
3058 |
STGB30V60F |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
3059 |
STGB40V60F |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed |
ST Microelectronics |
3060 |
STGF10H60DF |
Trench gate field-stop IGBT, H series 600 V, 10 A high speed |
ST Microelectronics |
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