No. |
Part Name |
Description |
Manufacturer |
3031 |
TGF3020-SM |
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor |
Qorvo |
3032 |
TIC106D |
400 V, 5 A, PNP silicon reverse-blocking triode thyristor |
Texas Instruments |
3033 |
TIC106M |
600 V, 5 A, PNP silicon reverse-blocking triode thyristor |
Texas Instruments |
3034 |
TIP110 |
2A N-P-N darlington power transistor. 60V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
3035 |
TIP111 |
2A N-P-N darlington power transistor. 80V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
3036 |
TIP112 |
2A N-P-N darlington power transistor. 100V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
3037 |
TIP115 |
2A P-N-P darlington power transistor. 60V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
3038 |
TIP116 |
2A P-N-P darlington power transistor. 80V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
3039 |
TIP117 |
2A P-N-P darlington power transistor. 100V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
3040 |
TIP120 |
Darlington silicon NPN power transistor, 60V, 5A |
Panasonic |
3041 |
TIP120 |
60 V, 5 A, 65 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
3042 |
TIP121 |
Darlington silicon NPN power transistor, 80V, 5A |
Panasonic |
3043 |
TIP121 |
80 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
3044 |
TIP121 |
80 V, 5 A, 65 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
3045 |
TIP122 |
Darlington silicon NPN power transistor, 100V, 5A |
Panasonic |
3046 |
TIP122 |
100 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
3047 |
TIP122 |
100 V, 5 A, 65 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
3048 |
TIP125 |
Darlington silicon PNP power transistor, 60V, 5A |
Panasonic |
3049 |
TIP126 |
Darlington silicon PNP power transistor, 80V, 5A |
Panasonic |
3050 |
TIP127 |
Darlington silicon PNP power transistor, 100V, 5A |
Panasonic |
3051 |
TIP140F |
60 V, 5 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
3052 |
TIP141F |
60 V, 5 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
3053 |
TIP142F |
60 V, 5 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
3054 |
TMS320C50PQ57 |
16-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=9K, 5.0V, 57 MHz |
Texas Instruments |
3055 |
TMS320C50PQA57 |
16-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=2K, 5.0V, 57MHz |
Texas Instruments |
3056 |
TMS320C51PQ57 |
16-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=8K, 5.0V, 57 MHz |
Texas Instruments |
3057 |
TMS320C51PQA57 |
16-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=8K, 5.0V, 57MHz |
Texas Instruments |
3058 |
TMS320C51PZ57 |
16-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=8K, 5.0V, 57 MHz |
Texas Instruments |
3059 |
TMS320C51PZA57 |
16-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=8K, 5.0V, 57MHz |
Texas Instruments |
3060 |
TMS320C52PJ57 |
16-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=4K, 5.0V, 57 MHz |
Texas Instruments |
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