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Datasheets for E SE

Datasheets found :: 35791
Page: | 1014 | 1015 | 1016 | 1017 | 1018 | 1019 | 1020 | 1021 | 1022 |
No. Part Name Description Manufacturer
30511 P4C422-20PC 20 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30512 P4C422-20SC 20 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30513 P4C422-25DM 25 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30514 P4C422-25DMB 25 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30515 P4C422-25FM 25 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30516 P4C422-25FMB 25 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30517 P4C422-25LM 25 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30518 P4C422-25LMB 25 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30519 P4C422-25PC 25 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30520 P4C422-25SC 25 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30521 P4C422-35DM 35 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30522 P4C422-35DMB 35 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30523 P4C422-35FM 35 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30524 P4C422-35FMB 35 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30525 P4C422-35LM 35 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30526 P4C422-35LMB 35 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30527 P4C422-35PC 35 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30528 P4C422-35SC 35 ns,static CMOS RAM, 256 x 4 ultra high speed Performance Semiconductor Corporation
30529 P4KE TRANSIENT VOLTAGE SUPPRESSOR EIC discrete Semiconductors
30530 P4KE10 TRANSIENT VOLTAGE SUPPRESSOR EIC discrete Semiconductors
30531 P4KE100 TRANSIENT VOLTAGE SUPPRESSOR EIC discrete Semiconductors
30532 P4KE100 81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
30533 P4KE100A TRANSIENT VOLTAGE SUPPRESSOR EIC discrete Semiconductors
30534 P4KE100A 85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
30535 P4KE10A TRANSIENT VOLTAGE SUPPRESSOR EIC discrete Semiconductors
30536 P4KE11 TRANSIENT VOLTAGE SUPPRESSOR EIC discrete Semiconductors
30537 P4KE110 TRANSIENT VOLTAGE SUPPRESSOR EIC discrete Semiconductors
30538 P4KE110 89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
30539 P4KE110A TRANSIENT VOLTAGE SUPPRESSOR EIC discrete Semiconductors
30540 P4KE110A 94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor


Datasheets found :: 35791
Page: | 1014 | 1015 | 1016 | 1017 | 1018 | 1019 | 1020 | 1021 | 1022 |



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