| No. |
Part Name |
Description |
Manufacturer |
| 3061 |
DS1644-120 |
32K x 8 nonvolatile timekeeping static RAM, 120ns access |
Dallas Semiconductor |
| 3062 |
DS1644-150 |
32K x 8 nonvolatile timekeeping static RAM, 150ns access |
Dallas Semiconductor |
| 3063 |
DS2016 |
2K x 8 3V/5V Operation Static RAM |
Dallas Semiconductor |
| 3064 |
DS2016 |
2K x 8 3V/5V Operation Static RAM |
MAXIM - Dallas Semiconductor |
| 3065 |
DS2016-100 |
2k x 8 3V/5V Operation Static RAM |
MAXIM - Dallas Semiconductor |
| 3066 |
DS2016-100+ |
2k x 8 3V/5V Operation Static RAM |
MAXIM - Dallas Semiconductor |
| 3067 |
DS2016-150 |
2k x 8 3V/5V Operation Static RAM |
MAXIM - Dallas Semiconductor |
| 3068 |
DS2016R-100 |
2k x 8 3V/5V Operation Static RAM |
MAXIM - Dallas Semiconductor |
| 3069 |
DS2016R-100+ |
2k x 8 3V/5V Operation Static RAM |
MAXIM - Dallas Semiconductor |
| 3070 |
DS2016R-150 |
2k x 8 3V/5V Operation Static RAM |
MAXIM - Dallas Semiconductor |
| 3071 |
DS2016S |
2K x 8 3V/5V Operation Static RAM |
Dallas Semiconductor |
| 3072 |
DS2064 |
8K x 8 Static RAM |
MAXIM - Dallas Semiconductor |
| 3073 |
DS2064-200 |
8K x 8 Static RAM |
Dallas Semiconductor |
| 3074 |
DS2064S-200 |
8K x 8 Static RAM |
Dallas Semiconductor |
| 3075 |
DS_K6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 3076 |
DS_K6F2008U2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 3077 |
DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 3078 |
DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 3079 |
DS_K6F4016U6G |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 3080 |
DS_K6F8016U6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 3081 |
DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 3082 |
DS_K6X8008C2B |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
| 3083 |
DT70V27L |
HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM |
IDT |
| 3084 |
DT70V27S |
HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM |
IDT |
| 3085 |
EDH816H64C |
+ 5V (+/-10%),64K x 16 CMOS,high speed programmable, static RAM module |
White Electronic Designs |
| 3086 |
EDI20180C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 3087 |
EDI20181C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 3088 |
EDI20182C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 3089 |
EDI20183C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 3090 |
EDI20184C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
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