| No. |
Part Name |
Description |
Manufacturer |
| 3061 |
2SA739 |
Silicon PNP triple diffused MESA high voltage switching transistor |
TOSHIBA |
| 3062 |
2SA778 |
Transistors>Switching/Bipolar |
Renesas |
| 3063 |
2SA778A |
Transistors>Switching/Bipolar |
Renesas |
| 3064 |
2SA78 |
Germanium PNP high current switching transistor |
Felvezeto Katalogus 1966 |
| 3065 |
2SA78 |
High-Speed Switching Transistor |
TOSHIBA |
| 3066 |
2SA949 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AUDIO AMPLIFIER AND HIGH VOLTAGE SWITCHING APPLICATIONS |
TOSHIBA |
| 3067 |
2SB0935 |
For low-voltage switching |
Panasonic |
| 3068 |
2SB1018 |
Silicon PNP triple diffused high current switching transistor |
TOSHIBA |
| 3069 |
2SB1018A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 3070 |
2SB1019 |
Silicon PNP triple diffused high current switching transistor |
TOSHIBA |
| 3071 |
2SB1020A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS |
TOSHIBA |
| 3072 |
2SB1031 |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 3073 |
2SB1032 |
Transistors>Switching/Bipolar |
Renesas |
| 3074 |
2SB1048 |
Transistors>Switching/Bipolar |
Renesas |
| 3075 |
2SB1067 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 3076 |
2SB1072(L) |
Bipolar power switching Darlington transistor |
Hitachi Semiconductor |
| 3077 |
2SB1072(S) |
Bipolar power switching Darlington transistor |
Hitachi Semiconductor |
| 3078 |
2SB1079 |
Transistors>Switching/Bipolar |
Renesas |
| 3079 |
2SB1091 |
Transistors>Switching/Bipolar |
Renesas |
| 3080 |
2SB1103 |
Transistors>Switching/Bipolar |
Renesas |
| 3081 |
2SB1108 |
Medium Speed Switching Complementary Pair with 2SD1608 |
Panasonic |
| 3082 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 3083 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 3084 |
2SB1123 |
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications |
SANYO |
| 3085 |
2SB1127 |
PNP Epitaxial Planar Silicon Transistor 20V/5A Switching Applications |
SANYO |
| 3086 |
2SB1131 |
PNP Epitaxial Planar Silicon Transistor Strobe, High-Current Switching Applications |
SANYO |
| 3087 |
2SB1134 |
PNP Epitaxial Planar Silicon Transistors 50V/5A Switching Applications |
SANYO |
| 3088 |
2SB1135 |
PNP Epitaxial Planar Silicon Transistors 50V/7A Switching Applications |
SANYO |
| 3089 |
2SB1136 |
PNP Epitaxial Planar Silicon Transistors 50V/12A Switching Applications |
SANYO |
| 3090 |
2SB1140 |
PNP Epitaxial Planar Silicon Transistor 20V/5A Switching Applications |
SANYO |
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