| No. |
Part Name |
Description |
Manufacturer |
| 3061 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 3062 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 3063 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 3064 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 3065 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 3066 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 3067 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 3068 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 3069 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 3070 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 3071 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 3072 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 3073 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 3074 |
BGA622L7 |
Infineon Technologies Introduces Fully Integrated SiGe LNA for GPS, WLAN, UMTS and further Mobile Applications |
Infineon |
| 3075 |
BH25FB1WG |
SILICON MONOLITHIC INTEGRATED CIRCUIT |
etc |
| 3076 |
BH28FB1WG |
Silicon Monolithic lntegrated Circuit |
ROHM |
| 3077 |
BH28FB1WHFV |
SILICON MONOLITHIC INTEGRATED CIRCUIT |
ROHM |
| 3078 |
BH6410KN |
SILICON MONOLITHIC INTEGRATION CIRCUIT AUDIO I/O LSI FOR DIGITAL STILL CAMERA |
ROHM |
| 3079 |
BLD6G21L-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 3080 |
BLD6G21LS-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 3081 |
BLD6G22L-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 3082 |
BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 3083 |
BM00801 |
INTEGRATED CONNECTOR MODULES |
etc |
| 3084 |
BP3595 |
Compact Wireless LAN Module with Integrated Antenna |
ROHM |
| 3085 |
BP359B |
Compliant Wireless LAN Module with Integrated Antenna |
ROHM |
| 3086 |
BPX34 |
Silicon P/N photo elements line containing 50 integrated elements for readout array with fine scanning |
AEG-TELEFUNKEN |
| 3087 |
BQ2085 |
SBS Compliant Gas Gauge With Integrated Oscillator For Use With The bq29311 |
Texas Instruments |
| 3088 |
BQ2085DBT |
SBS 1.1 Compliant Gas Gauge With Integrated Oscillator For Use With The bq29311 |
Texas Instruments |
| 3089 |
BQ2085DBT-V1P2 |
SBS 1.1 Compliant Gas Gauge With Integrated Oscillator For Use With The bq29311 |
Texas Instruments |
| 3090 |
BQ2085DBT-V1P3 |
SBS 1.1 Compliant Gas Gauge With Integrated Oscillator For Use With The bq29311 |
Texas Instruments |
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