| No. |
Part Name |
Description |
Manufacturer |
| 3091 |
HS9474K-2 |
37kHz sampling, +/-10V input, 12-bit A/D complete converter with reference, clock and three state output |
Sipex Corporation |
| 3092 |
HS9474T_B-1 |
37kHz sampling, +/-5V input, 12-bit A/D complete converter with reference, clock and three state output |
Sipex Corporation |
| 3093 |
HS9474T_B-2 |
37kHz sampling, +/-10V input, 12-bit A/D complete converter with reference, clock and three state output |
Sipex Corporation |
| 3094 |
HSP45102 |
Numerically Control Oscillator, 12-Bit, 40MHz, 32-Bit Frequency Control, BFSK/QPSK Modulation |
Intersil |
| 3095 |
HV510 |
240V, 12-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs |
Supertex Inc |
| 3096 |
HV510WG |
240V, 12-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs |
Supertex Inc |
| 3097 |
HV510X |
240V, 12-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs |
Supertex Inc |
| 3098 |
HY29F040AC-12 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3099 |
HY29F040AC-12E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3100 |
HY29F040AC-12I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3101 |
HY29F040AP-12 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3102 |
HY29F040AP-12E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3103 |
HY29F040AP-12I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3104 |
HY29F040AR-12 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3105 |
HY29F040AR-12E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3106 |
HY29F040AR-12I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3107 |
HY29F040AT-12 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3108 |
HY29F040AT-12E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3109 |
HY29F040AT-12I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 3110 |
HY57V161610ETP-8I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
| 3111 |
HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
| 3112 |
HY57V281620AT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
| 3113 |
HY57V281620HCLT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
| 3114 |
HY57V281620HCLT-8I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
| 3115 |
HY57V281620HCLTP-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
| 3116 |
HY57V281620HCST-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
| 3117 |
HY57V281620HCST-8I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
| 3118 |
HY57V281620HCSTP-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
| 3119 |
HY57V281620HCT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
| 3120 |
HY57V281620HCT-8I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
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