| No. |
Part Name |
Description |
Manufacturer |
| 3091 |
2SC3624 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3092 |
2SC3624A |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3093 |
2SC3632-Z |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 3094 |
2SC3632Z |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 3095 |
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3096 |
2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3097 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 3098 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 3099 |
2SC3669 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 3100 |
2SC366G |
Industrial Transistor Specification Table |
TOSHIBA |
| 3101 |
2SC3670 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3102 |
2SC3673 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS |
TOSHIBA |
| 3103 |
2SC367G |
Industrial Transistor Specification Table |
TOSHIBA |
| 3104 |
2SC368 |
Industrial Transistor Specification Table |
TOSHIBA |
| 3105 |
2SC369G |
Industrial Transistor Specification Table |
TOSHIBA |
| 3106 |
2SC370 |
Low Frequency Small-Signal Transistor |
TOSHIBA |
| 3107 |
2SC3704 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3108 |
2SC3707 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 3109 |
2SC3709 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 3110 |
2SC3709A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 3111 |
2SC371 |
Low Frequency Small-Signal Transistor |
TOSHIBA |
| 3112 |
2SC3710 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 3113 |
2SC3710A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 3114 |
2SC371G |
Industrial Transistor Specification Table |
TOSHIBA |
| 3115 |
2SC372 |
Low Frequency Small-Signal Transistor |
TOSHIBA |
| 3116 |
2SC3728 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3117 |
2SC372G |
Industrial Transistor Specification Table |
TOSHIBA |
| 3118 |
2SC373 |
Low Frequency Small-Signal Transistor |
TOSHIBA |
| 3119 |
2SC3734 |
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3120 |
2SC3735 |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| | | |
