No. |
Part Name |
Description |
Manufacturer |
3091 |
IRF730 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
3092 |
IRF730 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
3093 |
IRF731 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
3094 |
IRF731 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A |
Siliconix |
3095 |
IRF732 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
3096 |
IRF732 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A |
Siliconix |
3097 |
IRF733 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
3098 |
IRF733 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A |
Siliconix |
3099 |
IRF740 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A |
Siliconix |
3100 |
IRF741 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A |
Siliconix |
3101 |
IRF742 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 8.0A |
Siliconix |
3102 |
IRF743 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 8.0A |
Siliconix |
3103 |
IRF82 |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
3104 |
IRF820 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
3105 |
IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
3106 |
IRF820 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.5A |
Siliconix |
3107 |
IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A |
SGS Thomson Microelectronics |
3108 |
IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
3109 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
3110 |
IRF821 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.5A |
Siliconix |
3111 |
IRF822 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
3112 |
IRF822 |
N-channel enhancement mode power MOS transistor, 500V, 2.8A |
SGS Thomson Microelectronics |
3113 |
IRF822 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.0A |
Siliconix |
3114 |
IRF822FI |
N-channel enhancement mode power MOS transistor, 500V, 1.9A |
SGS Thomson Microelectronics |
3115 |
IRF822FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
3116 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
3117 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
3118 |
IRF823 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A |
Siliconix |
3119 |
IRF82FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
3120 |
IRF830 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
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