No. |
Part Name |
Description |
Manufacturer |
3091 |
2N5906 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
3092 |
2N5907 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
3093 |
2N5908 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
3094 |
2N5909 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
3095 |
2N5949 |
Leaded JFET General Purpose |
Central Semiconductor |
3096 |
2N5950 |
Leaded JFET General Purpose |
Central Semiconductor |
3097 |
2N5951 |
Leaded JFET General Purpose |
Central Semiconductor |
3098 |
2N5952 |
Leaded JFET General Purpose |
Central Semiconductor |
3099 |
2N5953 |
Leaded JFET General Purpose |
Central Semiconductor |
3100 |
2N5954 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3101 |
2N5955 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3102 |
2N5956 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3103 |
2N5961 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
3104 |
2N5961 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3105 |
2N5961_D27Z |
NPN General Purpose Amplifer |
Fairchild Semiconductor |
3106 |
2N5962 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
3107 |
2N5962 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3108 |
2N5962_D74Z |
NPN General Purpose Amplifer |
Fairchild Semiconductor |
3109 |
2N5963 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
3110 |
2N5991 |
General Purpose Bipolar Transistor |
New Jersey Semiconductor |
3111 |
2N6049 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3112 |
2N6076 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
3113 |
2N6099 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3114 |
2N6099 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
3115 |
2N6101 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3116 |
2N6101 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
3117 |
2N6103 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3118 |
2N6107 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3119 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
3120 |
2N6109 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| | | |