| No. |
Part Name |
Description |
Manufacturer |
| 3091 |
IRF7341IPBF |
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market |
International Rectifier |
| 3092 |
IRF7341ITRPBF |
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market |
International Rectifier |
| 3093 |
IRF7343I |
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market |
International Rectifier |
| 3094 |
IRF7343IPBF |
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market |
International Rectifier |
| 3095 |
IRF7343ITRPBF |
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market |
International Rectifier |
| 3096 |
IRF7379I |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market |
International Rectifier |
| 3097 |
IRF7379ITRPBF |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market |
International Rectifier |
| 3098 |
ISL6185XXI |
Dual USB Port Power Supply Controller - Covering the Industrial Temperature Range of -40�C to +85�C |
Intersil |
| 3099 |
ISL6186XXI |
USB Port Power Supply Controller - Covering the Industrial Temperature Range of -40�C to +85�C |
Intersil |
| 3100 |
JAN2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 3101 |
JAN2N3127 |
PNP germanium mesa transistor designed for industrial and commercial VHF/UHF amplifier applications |
Motorola |
| 3102 |
JAN2N559-1 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 3103 |
JAN2N559-2 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 3104 |
JAN2N559-3 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 3105 |
JPM160 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 3106 |
JPM160PS03 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 3107 |
JPM160PS05 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 3108 |
JPM160PS07 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 3109 |
JPM160PS12 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 3110 |
JPM160PS13 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 3111 |
JPM160PS15 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 3112 |
JPM160PS24 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 3113 |
JPM160PS48 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 3114 |
K2141 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 3115 |
K246 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 3116 |
K246 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 3117 |
K64004C1D |
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3118 |
K6R1004C1D-JC(I)10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3119 |
K6R1004C1D-JC(I)10_12 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3120 |
K6R1004C1D-JC(I)12 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
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