| No. |
Part Name |
Description |
Manufacturer |
| 31 |
KM416RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 32 |
KM416RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 33 |
KM418RD8AC(D)-RG60 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 34 |
KM418RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 35 |
KM418RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 36 |
LE28FV4001AM |
V(dd): -0.5 to +6.0V; P(d)max: 600mW; ; CMOS LSI |
SANYO |
| 37 |
LE28FV4001ARS |
V(dd): -0.5 to +6.0V; P(d)max: 600mW; ; CMOS LSI |
SANYO |
| 38 |
LE28FV4001ATS |
V(dd): -0.5 to +6.0V; P(d)max: 600mW; ; CMOS LSI |
SANYO |
| 39 |
SSH10N60A |
BV(dss): 600V / R(ds): 0.8Ohm / I(d): 10A / advanced power MOSFET |
Fairchild Semiconductor |
| 40 |
SSR3055A |
BV(dss): 60V; R(ds-on): 0.15 Ohm; I(d): 8 A; advanced power MOSFET |
Samsung Electronic |
| 41 |
TA7769P |
V(cc): 14V; I(cc): 1.5 A; P(d): 3.6W; analog IC |
TOSHIBA |
| 42 |
TSD4M150F |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 43 |
TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 44 |
U3055A |
BV(dss): 60V; R(ds-on): 0.15 Ohm; I(d): 8 A; advanced power MOSFET |
Samsung Electronic |
| 45 |
UPD7503G |
V(dd): -0.3 to +7.0V; V(i)(d): -03 to +0.3V; Nec microchip |
NEC |
| 46 |
ZVN0120B |
BV(dss): 200V; I(d): 0.16A; R(ds): 16 Ohm; N-channel enhancement-mode vertical DMOS FET |
Zetex Semiconductors |
| 47 |
ZVN0120L |
BV(dss): 200V; I(d): 0.16A; R(ds): 16 Ohm; N-channel enhancement-mode vertical DMOS FET |
Zetex Semiconductors |
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