| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 32 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 33 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
| 34 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 35 |
2SAR513P5 |
PNP -50V -1A Medium Power Transistor |
ROHM |
| 36 |
2SAR513P5T100 |
PNP -50V -1A Medium Power Transistor |
ROHM |
| 37 |
2SAR533P5 |
PNP -50V -3A Medium Power Transistor |
ROHM |
| 38 |
2SAR533P5T100 |
PNP -50V -3A Medium Power Transistor |
ROHM |
| 39 |
2SAR553P5 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 40 |
2SAR553P5T100 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 41 |
2SAR554P5 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 42 |
2SAR554P5T100 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 43 |
2SAR586D |
PNP -80V -5.0A Medium Power Transistor |
ROHM |
| 44 |
2SAR586DGTL |
PNP -80V -5.0A Medium Power Transistor |
ROHM |
| 45 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 46 |
2SB1122 |
Bipolar Transistor, -50V, -1A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 47 |
2SB1204 |
Bipolar Transistor, -50V, -8A, Low VCE(sat), PNP Single TP/TP-FA |
ON Semiconductor |
| 48 |
2SB1302 |
Bipolar Transistor, -20V, -5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 49 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 50 |
2SK1119 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) DC .DC Converter and Motor Drive Applications |
TOSHIBA |
| 51 |
2SK1120 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) DC .DC Converter and Motor Drive Applications |
TOSHIBA |
| 52 |
2SK1359 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) DC .DC Converter and Motor Drive Applications |
TOSHIBA |
| 53 |
2SK1365 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) Switching Power Supply Applications |
TOSHIBA |
| 54 |
2SK1489 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5) Chopper Regulator Applications |
TOSHIBA |
| 55 |
2SK1930 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) Chopper Regulator, DC .DC Converter, and Motor Drive Applications |
TOSHIBA |
| 56 |
2SK2274 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) Chopper Regulator, DC .DC Converter and Motor Drive Applications |
TOSHIBA |
| 57 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 58 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 59 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 60 |
2T13K33MDBVREPG4 |
Enhanced Product Processor Supervisory Circuits With Window-Watchdog 6-SOT-23 -55 to 125 |
Texas Instruments |
| | | |
