No. |
Part Name |
Description |
Manufacturer |
31 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
32 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
33 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
34 |
40406 |
Silicon P-N-P power transistor. -50V. |
General Electric Solid State |
35 |
50A02CH |
Bipolar Transistor, -50V, -0.5A, Low VCE(sat) PNP Single CPH3 |
ON Semiconductor |
36 |
50A02MH |
Bipolar Transistor, -50V, -0.5A, Low VCE(sat) PNP Single MCPH3 |
ON Semiconductor |
37 |
5LP01M |
P-Channel Small Signal MOSFET -50V, -0.07A, 23 Ohm, Single MCP |
ON Semiconductor |
38 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
39 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
40 |
BC557 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
41 |
BC560 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
42 |
CPH6531 |
Bipolar Transistor, -50V, -1A, Low VCE(sat) PNP Dual CPH6 |
ON Semiconductor |
43 |
CSD95472Q5MC |
60A Synchronous Buck NexFET Smart Power Stage with DualCool Package 12-VSON-CLIP -50 to 155 |
Texas Instruments |
44 |
CSD95472Q5MCT |
60A Synchronous Buck NexFET Smart Power Stage with DualCool Package 12-VSON-CLIP -50 to 155 |
Texas Instruments |
45 |
DTA113ZCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) |
ROHM |
46 |
DTA113ZCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) |
ROHM |
47 |
DTA114ECA |
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) |
ROHM |
48 |
DTA114ECAHZG |
PNP -100mA -50V Digital transistor (Bias Resistor Built-in transistor) (Corresponds To AEC-Q101) |
ROHM |
49 |
DTA114ECAHZGT116 |
PNP -100mA -50V Digital transistor (Bias Resistor Built-in transistor) (Corresponds To AEC-Q101) |
ROHM |
50 |
DTA114ECAT116 |
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) |
ROHM |
51 |
DTA114TCA |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) |
ROHM |
52 |
DTA114TCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) |
ROHM |
53 |
DTA114TCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) |
ROHM |
54 |
DTA114TCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) |
ROHM |
55 |
DTA114YCA |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) |
ROHM |
56 |
DTA114YCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) |
ROHM |
57 |
DTA114YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) |
ROHM |
58 |
DTA114YCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) |
ROHM |
59 |
DTA115ECA |
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) |
ROHM |
60 |
DTA115ECAHZG |
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) |
ROHM |
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