No. |
Part Name |
Description |
Manufacturer |
31 |
AS7C31026A-10JC |
3.3V 64K x 16 CM0S SRAM , 10ns access time |
Alliance Semiconductor |
32 |
AS7C31026A-10TC |
3.3V 64K x 16 CM0S SRAM , 10ns access time |
Alliance Semiconductor |
33 |
AS7C31026A-10TI |
3.3V 64K x 16 CM0S SRAM , 10ns access time |
Alliance Semiconductor |
34 |
AS7C3256-10JC |
3.3V 32K x 8 CM0S SRAM (common I/O), 10ns access time |
Alliance Semiconductor |
35 |
AS7C3256-10JI |
3.3V 32K x 8 CM0S SRAM (common I/O), 10ns access time |
Alliance Semiconductor |
36 |
AS7C3256-10PC |
3.3V 32K x 8 CM0S SRAM (common I/O), 10ns access time |
Alliance Semiconductor |
37 |
AS7C3256-10TC |
3.3V 32K x 8 CM0S SRAM (common I/O), 10ns access time |
Alliance Semiconductor |
38 |
AS7C3256-10TI |
3.3V 32K x 8 CM0S SRAM (common I/O), 10ns access time |
Alliance Semiconductor |
39 |
AS7C3256A-10JC |
3.3V 32K x 8 CM0S SRAM (common I/O), 10ns access time |
Alliance Semiconductor |
40 |
AS7C3256A-10JI |
3.3V 32K x 8 CM0S SRAM (common I/O), 10ns access time |
Alliance Semiconductor |
41 |
AS7C3256A-10TC |
3.3V 32K x 8 CM0S SRAM (common I/O), 10ns access time |
Alliance Semiconductor |
42 |
AS7C3256A-10TI |
3.3V 32K x 8 CM0S SRAM (common I/O), 10ns access time |
Alliance Semiconductor |
43 |
AS7C34096-10JC |
3.3V 512K x 8 CMOS SRAM, access time 10ns |
Alliance Semiconductor |
44 |
AS7C34096-10TC |
3.3V 512K x 8 CMOS SRAM, access time 10ns |
Alliance Semiconductor |
45 |
AS7C34098-10TC |
3.3V 256K x 16 CMOS SRAM, access time 10ns |
Alliance Semiconductor |
46 |
AS7C3513-10JC |
3.3V 32K x 16 CMOS SRAM, 10ns access time |
Alliance Semiconductor |
47 |
AS7C3513-10TC |
3.3V 32K x 16 CMOS SRAM, 10ns access time |
Alliance Semiconductor |
48 |
AS7C513-10TC |
5V 32K x 16 CMOS SRAM, 10ns access time |
Alliance Semiconductor |
49 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
50 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
51 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
52 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
53 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
54 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
55 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
56 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
57 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
58 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
59 |
CY7C1012AV25-10BGI |
512K x 24 static RAM, 10ns |
Cypress |
60 |
CY7C1018V33-10VC |
128K x 8 static RAM, 10ns |
Cypress |
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