No. |
Part Name |
Description |
Manufacturer |
31 |
113CNQ080A |
80V 110A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
32 |
113CNQ080ASL |
80V 110A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
33 |
113CNQ080ASM |
80V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
34 |
113CNQ100A |
100V 110A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
35 |
113CNQ100ASL |
100V 110A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
36 |
113CNQ100ASM |
100V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
37 |
115CNQ015A |
15V 110A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
38 |
115CNQ015ASL |
15V 110A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
39 |
115CNQ015ASM |
15V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
40 |
15042-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 110VDC |
NTE Electronics |
41 |
15KP110 |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
42 |
15KP110 |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
43 |
15KP110A |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
44 |
15KP110A |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A. |
Panjit International Inc |
45 |
15KP110C |
Diode TVS Single Bi-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
46 |
15KP110C |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
47 |
15KP110CA |
Diode TVS Single Bi-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
48 |
15KP110CA |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A. |
Panjit International Inc |
49 |
15KPA110 |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
50 |
15KPA110A |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
51 |
15KPA110C |
Diode TVS Single Bi-Dir 110V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
52 |
15KPA110CA |
Diode TVS Single Bi-Dir 110V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
53 |
1M110ZS1 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 1% tolerance. |
Motorola |
54 |
1M110ZS2 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 2% tolerance. |
Motorola |
55 |
1M110ZS5 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 5% tolerance. |
Motorola |
56 |
1N1796 |
Zener Diode 110V |
Motorola |
57 |
1N1796A |
Zener Diode 110V |
Motorola |
58 |
1N1809 |
Zener Diode 110V 10W |
Motorola |
59 |
1N1809A |
Zener Diode 110V 10W |
Motorola |
60 |
1N2009 |
Zener Diode 110V 10W |
Motorola |
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