| No. |
Part Name |
Description |
Manufacturer |
| 31 |
122NQ030 |
30V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 32 |
122NQ030R |
30V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
| 33 |
123NQ080 |
80V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 34 |
123NQ100 |
100V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 35 |
123NQ100R |
100V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
| 36 |
125NQ015 |
15V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 37 |
125NQ015R |
15V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
| 38 |
129NQ135 |
135V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 39 |
129NQ135R |
135V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
| 40 |
129NQ150 |
150V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 41 |
129NQ150R |
150V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
| 42 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 43 |
12QF11 |
Silicon alloy-diffused junction avalanche rectifier 1200V 12A 3.8kW |
TOSHIBA |
| 44 |
1503-120B |
Max delay 120 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 45 |
1504-120B |
Delay 120 +/-6 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 46 |
1504-120C |
Delay 120 +/-6 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 47 |
1504-120E |
Delay 120 +/-6 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 48 |
1504-120F |
Delay 120 +/-6 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 49 |
15049AC |
Surge arrester (gas filled). Nominal breakdown voltage 120VAC. |
NTE Electronics |
| 50 |
150QD11 |
Silicon alloy-diffused junction rectifier 1200V 150A |
TOSHIBA |
| 51 |
1513-120B |
Delay 120 +/-6 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 52 |
1513-120Y |
Delay 120 +/-6 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 53 |
1514-120B |
Delay 120 +/-6 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 54 |
1514-120D |
Delay 120 +/-6 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 55 |
1514-120Y |
Delay 120 +/-6 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 56 |
15KP120 |
Diode TVS Single Uni-Dir 120V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 57 |
15KP120 |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
| 58 |
15KP120A |
Diode TVS Single Uni-Dir 120V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 59 |
15KP120A |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A. |
Panjit International Inc |
| 60 |
15KP120C |
Diode TVS Single Bi-Dir 120V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| | | |
