| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2020-1200 |
Delay 1200 +/-24 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 32 |
20RIF120W |
V(rrm): 1200V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 33 |
20SI12 |
20A 1200V Silicon Rectifier Diode |
IPRS Baneasa |
| 34 |
20SI12R |
20A 1200V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 35 |
250JB12L |
V(rrm): 1200V; 25A rectifier bridge |
International Rectifier |
| 36 |
25QF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1200V 12kW |
TOSHIBA |
| 37 |
2MBI75S |
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A |
Fuji Electric |
| 38 |
2N3884 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 39 |
2N3884-2N3895 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 40 |
2N3885 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 41 |
2N3886 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 42 |
2N3887 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 43 |
2N3888 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 44 |
2N3889 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 45 |
2N3890 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 46 |
2N3891 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 47 |
2N3892 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 48 |
2N3893 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 49 |
2N3894 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 50 |
2N3895 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| 51 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 52 |
2SC4256 |
NPN Triple Diffused Planar Silicon Transistor 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 53 |
2SC4257 |
NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 54 |
2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 55 |
2SC4633LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 56 |
2SD106A |
Ultra-compact dual SCALE driver for IGBTs with blocking voltages up to 1200V |
CONCEPT |
| 57 |
300QD11 |
Silicon alloy diffused junction rectifier 350A 1200V |
TOSHIBA |
| 58 |
320PJT200 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 59 |
320PJT250 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 60 |
350PEQ120W |
V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
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