DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 16 X

Datasheets found :: 147
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
31 AD8114AST Low Cost 225 MHz 16 X 16 Crosspoint Switches Analog Devices
32 AD8115 Low Cost 225 MHz 16 x 16 Crosspoint Switch, G=+2 Analog Devices
33 AD8115-EB Low Cost 225 MHz 16 X 16 Crosspoint Switches Analog Devices
34 AD8115-EVAL Low Cost 225 MHz 16 x 16 Crosspoint Switch, G=+2 Analog Devices
35 AD8115AST Low Cost 225 MHz 16 X 16 Crosspoint Switches Analog Devices
36 AD8116-EB 200 MHz, 16 x 16 Buffered Video Crosspoint Switch Analog Devices
37 AD8116JST 200 MHz, 16 x 16 Buffered Video Crosspoint Switch Analog Devices
38 CD22M3494 Switch, Crosspoint, 16 X 8 X 1, BiMOS-E Intersil
39 D52W20 52 Inch 16 x 9 HDTV Monitor SGS Thomson Microelectronics
40 IM29C510 CMOS 16 x 16 Bit, 65ns (Commercial) 75ns (Military) Multiplier/Accumulator Intersil
41 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
42 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
43 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
44 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
45 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
46 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
47 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
48 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
49 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
50 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
51 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
52 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
53 KM416RD8AC-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
54 KM416RD8AC-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
55 KM416RD8AC-RK80 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
56 KM416RD8AD-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
57 KM416RD8AD-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
58 KM416RD8AD-RK80 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
59 KM416RD8AS-RM80 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
60 KM416RD8AS-SM80 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). Samsung Electronic


Datasheets found :: 147
Page: | 1 | 2 | 3 | 4 | 5 |



© 2024 - www Datasheet Catalog com