| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N34 |
Diode Switching 175V 0.5A 2-Pin DO-35 |
New Jersey Semiconductor |
| 32 |
1N4084 |
Temperature compensated Zener reference diode 175V |
Motorola |
| 33 |
1N4084 |
Diode Zener Single 175V 5% 2.5W 2-Pin Case EE |
New Jersey Semiconductor |
| 34 |
1N4084A |
Temperature compensated Zener reference diode 175V |
Motorola |
| 35 |
1N4084A |
Diode Zener Single 175V 5% 2.5W 2-Pin Case EE |
New Jersey Semiconductor |
| 36 |
1N4237 |
Zener Diode 175V 10W |
Motorola |
| 37 |
1N4237A |
Zener Diode 175V 10W |
Motorola |
| 38 |
1N4237B |
Zener Diode 175V 10W |
Motorola |
| 39 |
1N463A |
General purpose high conductance diode. Working inverse voltage 175V. |
Fairchild Semiconductor |
| 40 |
1N463A |
Diode 175V 0.4A 2-Pin DO-7 |
New Jersey Semiconductor |
| 41 |
1N5343B |
7.5 V, 175 mA, 5 W glass passivated zener diode |
Fagor |
| 42 |
1N5409 |
Rectifier Diode 175V 40A |
Motorola |
| 43 |
1N5410 |
Rectifier Diode 175V 12A |
Motorola |
| 44 |
1N5558 |
Diode TVS Single Uni-Dir 175V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 45 |
1N5558A |
Diode TVS Single Uni-Dir 175V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 46 |
1N5613 |
Diode TVS Single Uni-Dir 175V 1.5KW 2-Pin Case G |
New Jersey Semiconductor |
| 47 |
1N6072 |
Diode TVS Single Bi-Dir 175V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 48 |
1N6072B |
Diode TVS Single Bi-Dir 175V 15KW 2-Pin DO-13 Bulk |
New Jersey Semiconductor |
| 49 |
2020-1750 |
Delay 1750 +/-35 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 50 |
2N3375 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 51 |
2N3553 |
NPN silicon high frequency transistor 2.5W - 175MHz |
Motorola |
| 52 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 53 |
2N3583 |
Trans GP BJT NPN 175V 5A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 54 |
2N3632 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 55 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 56 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 57 |
2N3637 |
Trans GP BJT PNP 175V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 58 |
2N3638 |
Trans GP BJT PNP 175V 1A 3-Pin TO-5 |
New Jersey Semiconductor |
| 59 |
2N3691 |
Trans GP BJT PNP 175V 1A 3-Pin TO-5 |
New Jersey Semiconductor |
| 60 |
2N3884 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
| | | |
