| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CASE 80-02 |
Case Outline Dimensions Motorola POWER databook 1980 |
Motorola |
| 32 |
CASE 90-05 |
Case Outline Dimensions Motorola POWER databook 1980 |
Motorola |
| 33 |
CASE340 |
Case Outline Dimensions Motorola POWER databook 1980 |
Motorola |
| 34 |
CD9011I |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 132 - 198 hFE |
Continental Device India Limited |
| 35 |
CD9018I |
0.400W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.030A Ic, 132 - 198 hFE |
Continental Device India Limited |
| 36 |
CEMI |
Lista preferencyjna 1982/84 |
Ultra CEMI |
| 37 |
COMPARATORS |
DEFINITIONS for comparators from Raytheon Linear Integrated Circuits Databook 1989 |
Raytheon |
| 38 |
CROSS REFERENCE |
Voltage Regulator cross reference guide from LINEAR SWITCHMODE VOLTAGE REGULATOR HANDBOOK 1989 |
Motorola |
| 39 |
CROSS REFERENCE |
Cross Reference from 1986 Motorola RF Device Data rev 2 |
Motorola |
| 40 |
CROSS REFERENCE |
RAM Cross Reference Guide from Data Book Synertek 1983 |
Synertek |
| 41 |
DIODE SYMBOLS |
Tesla Katalog 1987 - diode symbols |
Tesla Elektronicke |
| 42 |
DUOWATT |
Case Outline Dimensions Motorola POWER databook 1980 |
Motorola |
| 43 |
EFM-1900 |
E-Series Surface Mount Mixer 1850 - 1980 MHz |
Tyco Electronics |
| 44 |
ENA1766 |
P-Channel Power MOSFET, -12V, -2A, 198mOhm, Single MCPH3 |
ON Semiconductor |
| 45 |
FCB20N60_F085 |
N-Channel MOSFET 600V, 20A, 198m? |
Fairchild Semiconductor |
| 46 |
IRF7946 |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 198 amperes optimized with low on resistance. |
International Rectifier |
| 47 |
IRF7946TRPBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 198 amperes optimized with low on resistance. |
International Rectifier |
| 48 |
OPERATIONAL AMPLIFIERS |
Definitions from Raytheon Linear Integrated Circuits Databook 1989 |
Raytheon |
| 49 |
P4KE180C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 50 |
P4KE220C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 51 |
P6KE180 |
162- 198V transient voltage suppressor |
DC Components |
| 52 |
P6KE180 |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 53 |
P6KE180C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 54 |
P6KE220C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 55 |
PACKAGES |
IC Packages MECHANICAL DATA from Crystal Data Book 1988 |
Crystal Semiconductor Corporation |
| 56 |
PACKAGES |
Package Outlines from SMC Data Catalog 1982-83 |
Standard Microsystems |
| 57 |
PACKAGING |
TAPE AND REEL PACKAGING from AVANTEK Microwave Semiconductors GaAs and Silicon Products Data Book 1989 |
AVANTEK |
| 58 |
PACKAGING |
INFORMATIONS about IC packages from Raytheon Linear Integrated Circuits Databook 1989 |
Raytheon |
| 59 |
PACKAGING |
INFORMATIONS about IC packaging from XICOR DATABOOK 1985 |
Xicor |
| 60 |
RF3511 |
1920 - 1980 MHz, 3 V WCDMA Band 1 Power Amplifier Module |
Qorvo |
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