No. |
Part Name |
Description |
Manufacturer |
31 |
10DF6 |
600V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
32 |
10DF6 |
Diode Switching 600V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
33 |
10DF6TR |
600V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
34 |
10DF8 |
800V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
35 |
10DF8 |
Diode Switching 800V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
36 |
10DF8TR |
800V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
37 |
1BQ20 |
20V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package |
International Rectifier |
38 |
1BQ40 |
40V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package |
International Rectifier |
39 |
1BZ61 |
Silicon diffused junction rectifier 1A 100V |
TOSHIBA |
40 |
1DZ61 |
Silicon diffused junction rectifier 1A 200V |
TOSHIBA |
41 |
1GZ61 |
Silicon diffused junction rectifier 1A 400V |
TOSHIBA |
42 |
1JZ61 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
43 |
1LE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 800V |
TOSHIBA |
44 |
1LZ61 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
45 |
1N3611 |
Diode Switching 200V 1A 2-Pin Case G-2 |
New Jersey Semiconductor |
46 |
1N3611GP |
Diode Switching 200V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
47 |
1N3612 |
Diode Switching 400V 1A 2-Pin Case G-2 |
New Jersey Semiconductor |
48 |
1N3613 |
Diode Switching 600V 1A 2-Pin Case G-2 |
New Jersey Semiconductor |
49 |
1N3614 |
Diode Switching 800V 1A 2-Pin Case G-2 |
New Jersey Semiconductor |
50 |
1N361A |
Diode 800V 1A 2-Pin Case G-2 |
New Jersey Semiconductor |
51 |
1N4001 |
V(rrm): 50V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
52 |
1N4001 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 50V |
IPRS Baneasa |
53 |
1N4001 |
Diode 50V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
54 |
1N4001 |
Diffused silicon rectifier 1A 50V |
Texas Instruments |
55 |
1N4001B |
Diode 50V 1A 2-Pin DO-41 Box |
New Jersey Semiconductor |
56 |
1N4001G |
Diode Switching 50V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
57 |
1N4001GP |
50 V, 1A glass passivated junction rectifier |
Fagor |
58 |
1N4001GP |
Diode 100V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
59 |
1N4002 |
V(rrm): 100V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
60 |
1N4002 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 100V |
IPRS Baneasa |
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