| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CSD669 |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 320 hFE. |
Continental Device India Limited |
| 32 |
CSD669A |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 200 hFE. |
Continental Device India Limited |
| 33 |
CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 34 |
CSD669AC |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 35 |
CSD669B |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 36 |
CSD669C |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 37 |
CSD669D |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 160 - 320 hFE. |
Continental Device India Limited |
| 38 |
MJE340 |
20.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Complementary MJE350 |
Continental Device India Limited |
| 39 |
MJE350 |
20.000W Switching PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Complementary MJE340 |
Continental Device India Limited |
| 40 |
SG531P20.0000M |
Crystal oscillator, 20.0000MHz |
Epson Company |
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