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Datasheets for 350

Datasheets found :: 1097
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No. Part Name Description Manufacturer
31 2N650 Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 New Jersey Semiconductor
32 2N6513 Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
33 2N6517 0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE Continental Device India Limited
34 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
35 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
36 2N6520 0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE Continental Device India Limited
37 2N653 Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 New Jersey Semiconductor
38 2N654 Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 New Jersey Semiconductor
39 2N655 Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 New Jersey Semiconductor
40 2N6559 Trans GP BJT NPN 350V 0.5A 3-Pin(3+Tab) TO-202 New Jersey Semiconductor
41 2N6579 Trans GP BJT NPN 350V 12A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
42 2N658 Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 New Jersey Semiconductor
43 2N659 Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 New Jersey Semiconductor
44 2N6654 Trans GP BJT NPN 350V 20A New Jersey Semiconductor
45 2N6677 NPN silicon power transistor. 15 A, 350 V, 175 W. Motorola
46 2N6677 Trans GP BJT NPN 350V 15A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
47 2N6739 Trans GP BJT NPN 350V 10A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
48 2N6759 N-Channel Power MOSFETs/ 5.5A/ 350V/400V Fairchild Semiconductor
49 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
50 2N6760 N-Channel Power MOSFETs/ 5.5A/ 350V/400V Fairchild Semiconductor
51 2N6767 N-Channel Power MOSFETs/ 15A/ 350V/400V Fairchild Semiconductor
52 2N6768 N-Channel Power MOSFETs/ 15A/ 350V/400V Fairchild Semiconductor
53 2N686 25A silicon controlled rectifier. Vrsom 350V. General Electric Solid State
54 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Nexperia
55 2N7002BK 60 V, 350 mA N-channel Trench MOSFET NXP Semiconductors
56 2N7002PV 60 V, 350 mA dual N-channel Trench MOSFET Nexperia
57 2N7002PV 60 V, 350 mA dual N-channel Trench MOSFET NXP Semiconductors
58 2N7006 MOSPOWER N-Channel Enhancement Mode Transistor 350V 0.32A Siliconix
59 3000 Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz SGS Thomson Microelectronics
60 300LD11 General-Purpose Silicon Rectifiers 350A TOSHIBA


Datasheets found :: 1097
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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