| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AQY210KSZ |
PhotoMOS relay, GU (general use) type. 1-channel(form A) with short circuit protection. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 32 |
AQY210LSX |
PhotoMOS relay, GU (general use) type. 1-channel(form A) current limit function. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 33 |
AQY210LSZ |
PhotoMOS relay, GU (general use) type. 1-channel(form A) current limit function. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 34 |
AQY410EH |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 35 |
AQY410EHA |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 36 |
AQY410EHAX |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 37 |
AQY410EHAZ |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 38 |
AQY410SX |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 39 |
AQY410SZ |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 40 |
BU323 |
10 A N-P-N monollithic darlington power transistor. 350 V. 175 W. Gain of 150 at 6 A. |
General Electric Solid State |
| 41 |
IRF330 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 42 |
IRF330-333 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 43 |
IRF331 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 44 |
IRF332 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 45 |
IRF333 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 46 |
IRF731 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 47 |
IRF732 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 48 |
IRF733 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 49 |
IRFF311 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
| 50 |
IRFF313 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
| 51 |
LT211 |
Photo DMOS-FET relay. Input continuous LED current 50 mA, input peak LED current 1000 mA, input LED reverse voltage 5 V. Output load voltage 350 V, output load current 120 mA. |
Letex Technology |
| 52 |
MGB15N35CL |
Ignition IGBT 15 Amps, 350 Volts |
ON Semiconductor |
| 53 |
MGB15N35CLT4 |
Ignition IGBT 15 Amps, 350 Volts |
ON Semiconductor |
| 54 |
MGB19N35CL |
Ignition IGBT 19 Amps, 350 Volts |
ON Semiconductor |
| 55 |
MGB19N35CLT4 |
Ignition IGBT 19 Amps, 350 Volts |
ON Semiconductor |
| 56 |
MGP15N35CL |
Ignition IGBT 15 Amps, 350 Volts |
ON Semiconductor |
| 57 |
MGP15N35CL-D |
Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK |
ON Semiconductor |
| 58 |
MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts |
ON Semiconductor |
| 59 |
MGP19N35CL-D |
Ignition IGBT 19 Amps, 350 Volts N-Channel TO-220 and D2PAK |
ON Semiconductor |
| 60 |
MJ10000 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS |
Motorola |
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