No. |
Part Name |
Description |
Manufacturer |
31 |
5962R9687301VXA |
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. Total dose 1E5rads(Si) |
Aeroflex Circuit Technology |
32 |
5962R9687301VXC |
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. Total dose 1E5rads(Si) |
Aeroflex Circuit Technology |
33 |
5962R9687301VXX |
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 1E5rads(Si) |
Aeroflex Circuit Technology |
34 |
5962R9687301VYA |
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. Total dose 1E5rads(Si) |
Aeroflex Circuit Technology |
35 |
5962R9687301VYC |
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. Total dose 1E5rads(Si) |
Aeroflex Circuit Technology |
36 |
5962R9687301VYX |
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 1E5rads(Si) |
Aeroflex Circuit Technology |
37 |
AS4C256K16E0-35JC |
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time |
Alliance Semiconductor |
38 |
AS4C256K16F0-35JC |
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time |
Alliance Semiconductor |
39 |
AS4C256K16F0-35JI |
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time |
Alliance Semiconductor |
40 |
AS4C256K16F0-35TC |
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time |
Alliance Semiconductor |
41 |
AS4C256K16F0-35TI |
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time |
Alliance Semiconductor |
42 |
AS4LC256K16E0-35JC |
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time |
Alliance Semiconductor |
43 |
AS4LC256K16E0-35TC |
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time |
Alliance Semiconductor |
44 |
BYT28 SERIES |
Dual Ultrafast Soft Recovery Rectifier, Reverse Recovery Time 35ns, Forward Current 10A, Reverse Voltage 300 to 400V |
Vishay |
45 |
BYT28B SERIES |
Dual Ultrafast Soft Recovery Rectifier, Reverse Recovery Time 35ns, Forward Current 10A, Reverse Voltage 300 to 400V |
Vishay |
46 |
BYT28F SERIES |
Dual Ultrafast Soft Recovery Rectifier, Reverse Recovery Time 35ns, Forward Current 10A, Reverse Voltage 300 to 400V |
Vishay |
47 |
BYV29 SERIES |
Ultrafast Rectifier, Reverse Voltage 300 to 400V, Forward Current 8.0A, Reverse Recovery Time 35ns |
Vishay |
48 |
BYV29B SERIES |
Ultrafast Rectifier, Reverse Voltage 300 to 400V, Forward Current 8.0A, Reverse Recovery Time 35ns |
Vishay |
49 |
BYV29F SERIES |
Ultrafast Rectifier, Reverse Voltage 300 to 400V, Forward Current 8.0A, Reverse Recovery Time 35ns |
Vishay |
50 |
CY7C109-35VC |
128K x 8 Static RAM, TTL-compatible, 35ns |
Cypress |
51 |
CY7C109-35VI |
128K x 8 Static RAM, TTL-compatible, 35ns |
Cypress |
52 |
CY7C341B-35HC |
192-macrocell EPLD, 35ns |
Cypress |
53 |
CY7C341B-35HI |
192-macrocell EPLD, 35ns |
Cypress |
54 |
CY7C341B-35RC |
192-macrocell EPLD, 35ns |
Cypress |
55 |
CY7C342B-35RC |
128-macrocell EPLD, 35ns |
Cypress |
56 |
DS1100LU-35 |
3.3V 5-tap economy timing element (delay line), 35ns |
Dallas Semiconductor |
57 |
DS1100LZ-35 |
3.3V 5-tap economy timing element (delay line), 35ns |
Dallas Semiconductor |
58 |
DS1100M-35 |
5-tap economy timing element (delay line), 35ns |
Dallas Semiconductor |
59 |
DS1100U-35 |
5-tap economy timing element (delay line), 35ns |
Dallas Semiconductor |
60 |
DS1100Z-35 |
5-tap economy timing element (delay line), 35ns |
Dallas Semiconductor |
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