| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MZP4733D |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 5.1 V. +-1% tolerance. |
Motorola |
| 32 |
MZT4552 |
50 watt zener transient suppressor. Nom zener voltage 5.1 V. |
Motorola |
| 33 |
NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 34 |
NJU26108 |
SRS CS II 5.1 & TruSurround XT Decoder |
New Japan Radio |
| 35 |
NJU26108FR1 |
SRS CSII 5.1 AND TruSurround XT Decoder |
New Japan Radio |
| 36 |
NJU26110 |
SRS CS II 5.1 & TruSurround XT Decoder |
New Japan Radio |
| 37 |
NTGS3446 |
Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6 |
ON Semiconductor |
| 38 |
NTGS3446T1 |
Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6 |
ON Semiconductor |
| 39 |
NTGS3446T1G |
Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6 |
ON Semiconductor |
| 40 |
PBSS302PX |
20 V, 5.1 A PNP low VCEsat (BISS) transistor |
Nexperia |
| 41 |
PBSS302PX |
20 V, 5.1 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
| 42 |
PBSS303NX |
30 V, 5.1 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 43 |
PBSS303NX |
30 V, 5.1 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 44 |
PBSS303PX |
30 V, 5.1 A PNP low VCEsat (BISS) transistor |
Nexperia |
| 45 |
PBSS303PX |
30 V, 5.1 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
| 46 |
PBSS305NZ |
80 V, 5.1 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 47 |
PBSS305NZ |
80 V, 5.1 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 48 |
PBSS306NZ |
100 V, 5.1 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 49 |
PBSS306NZ |
100 V, 5.1 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 50 |
PMN35EN |
30 V, 5.1 A N-channel Trench MOSFET |
NXP Semiconductors |
| 51 |
PSMN5R0-80BS |
N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK |
Nexperia |
| 52 |
PSMN5R0-80BS |
N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK |
NXP Semiconductors |
| 53 |
SMBJ5918A |
1.5W silicon surface mount zener diode. Zener voltage 5.1 V. Test current 73.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 54 |
SMBJ5918B |
1.5W silicon surface mount zener diode. Zener voltage 5.1 V. Test current 73.5 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 55 |
SMBJ5918C |
1.5W silicon surface mount zener diode. Zener voltage 5.1 V. Test current 73.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 56 |
SMBJ5918D |
1.5W silicon surface mount zener diode. Zener voltage 5.1 V. Test current 73.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 57 |
SPP80N06S2-05 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; NL; 5.1 mOhm |
Infineon |
| 58 |
STF110N10F7 |
N-channel 100 V, 5.1 mOhm typ., 45 A, STripFET(TM) VII DeepGATE Power MOSFET in TO-220FP package |
ST Microelectronics |
| 59 |
STP110N10F7 |
N-channel 100 V, 5.1 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in TO-220 package |
ST Microelectronics |
| 60 |
ZMM5231A |
Surface mount zener diode. Nominal zener voltage 5.1 V. Test current 20 mA. +-3% tolerance. |
Jinan Gude Electronic Device |
| | | |
