DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 53

Datasheets found :: 377
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 HDSP-H571 HDSP-H571 · 53.2 mm (2.09 inch) General Purpose 5X7 Dot Matrix Alphanumeric Displays Agilent (Hewlett-Packard)
32 HDSP-H573 HDSP-H573 · 53.2 mm (2.09 inch) General Purpose 5X7 Dot Matrix Alphanumeric Displays Agilent (Hewlett-Packard)
33 HYB18T1G160AC-3.7 DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 533 (4-4-4); Available 3Q04 Infineon
34 HYB18T1G400AC-3.7 DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 533 (4-4-4); Available 3Q04 Infineon
35 HYB18T1G800AC-3.7 DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 533 (4-4-4); Available 3Q04 Infineon
36 HYB18T256160AC-3.7 DDR2 SDRAM Components - 256Mb (16Mx16) DDR2 533 (4-4-4) Available 3Q04 Infineon
37 HYB18T256400AC-3.7 DDR2 SDRAM Components - 256Mb (64Mx4) DDR2 533 (4-4-4) Available 3Q04 Infineon
38 HYB18T256800AC-3.7 DDR2 SDRAM Components - 256Mb (32Mx8) DDR2 533 (4-4-4) Available 3Q04 Infineon
39 HYB18T512160AC-3.7 DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 533 (4-4-4) Available 2Q04 Infineon
40 HYB18T512400AC-3.7 DDR2 SDRAM Components - 512Mb (128Mx4) DDR2 533 (4-4-4) Available 2Q04 Infineon
41 HYB18T512800AC-3.7 DDR2 SDRAM Components - 512Mb (64Mx8) DDR2 533 (4-4-4) Available 2Q04 Infineon
42 ISL5585 Ringing SLIC, 3.3V Supply, 75/85/100V, 53/58dB, Voice Over Broadband Intersil
43 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
44 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
45 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
46 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
47 K4R271869B-MCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
48 K4R271869B-NCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
49 K4R441869AM-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
50 K4R441869AN-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
51 KM416RD8AC-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
52 KM416RD8AD-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
53 KM418RD8AC-RG60 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
54 KM418RD8AD-RG60 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
55 M38180ED-FP Single-chip 8-bit CMOS microcomputer, 53248 PROM, 192RAM Mitsubishi Electric Corporation
56 M38180ED-FS Single-chip 8-bit CMOS microcomputer, 53248 PROM, 192 RAM Mitsubishi Electric Corporation
57 M38180MD-XXXFP Single-chip 8-bit CMOS microcomputer, 53248 ROM, 192 RAM (XXX-ROM number) Mitsubishi Electric Corporation
58 M38180MD-XXXFS Single-chip 8-bit CMOS microcomputer, 53248 ROM, 192 RAM (XXX-ROM number) Mitsubishi Electric Corporation
59 M38181ED-FP Single-chip 8-bit CMOS microcomputer, 53248 PROM, 256 RAM Mitsubishi Electric Corporation
60 M38181ED-FS Single-chip 8-bit CMOS microcomputer, 53248 PROM, 256 RAM Mitsubishi Electric Corporation


Datasheets found :: 377
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



© 2024 - www Datasheet Catalog com