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Datasheets for 71

Datasheets found :: 140
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No. Part Name Description Manufacturer
31 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
32 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
33 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
34 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
35 K4R271869B-NCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
36 K4R441869AM-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
37 K4R441869AN-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
38 KM416RD8AC-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
39 KM416RD8AD-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
40 KM418RD8AC-RK70 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
41 KM418RD8AD-RK70 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
42 MAX4074ALESA Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 5V/V, noniverting gain 6V/V, -3dB BW 71kHZ. MAXIM - Dallas Semiconductor
43 MAX4074ALEUK-T Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 5V/V, noniverting gain 6V/V, -3dB BW 71kHZ. MAXIM - Dallas Semiconductor
44 MAX4075ALESA Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 5V/V, noninverting gain 6V/V, -3dB BW 71kHz. MAXIM - Dallas Semiconductor
45 MAX4075ALEUA Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 5V/V, noninverting gain 6V/V, -3dB BW 71kHZ. MAXIM - Dallas Semiconductor
46 NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8 FL ON Semiconductor
47 PSMN075-100MSE N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications Nexperia
48 PSMN075-100MSE N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications NXP Semiconductors
49 REC10-7105DRWL 10W DC/DC converter with 71V input, +-5/+-1000mA output Recom International Power
50 REC10-7105DRWLZ 10W DC/DC converter with 71V input, +-5/+-1000mA output Recom International Power
51 REC10-7105SRWL 10W DC/DC converter with 71V input, 5/2000mA output Recom International Power
52 REC10-7105SRWLZ 10W DC/DC converter with 71V input, 5/2000mA output Recom International Power
53 REC10-7112DRWL 10W DC/DC converter with 71V input, +-12/+-416mA output Recom International Power
54 REC10-7112DRWLZ 10W DC/DC converter with 71V input, +-12/+-416mA output Recom International Power
55 REC10-7112SRWL 10W DC/DC converter with 719V input, 12/830mA output Recom International Power
56 REC10-7112SRWLZ 10W DC/DC converter with 71V input, 12/830mA output Recom International Power
57 REC10-7115DRWL 10W DC/DC converter with 71V input, +-15/+-333mA output Recom International Power
58 REC10-7115DRWLZ 10W DC/DC converter with 71V input, +-15/+-333mA output Recom International Power
59 REC10-7115SRWL 10W DC/DC converter with 71V input, 15/670mA output Recom International Power
60 REC10-7115SRWLZ 10W DC/DC converter with 71V input, 15/670mA output Recom International Power


Datasheets found :: 140
Page: | 1 | 2 | 3 | 4 | 5 |



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