No. |
Part Name |
Description |
Manufacturer |
31 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
32 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
33 |
K4R271669B-NCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz |
Samsung Electronic |
34 |
K4R271869B-MCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
35 |
K4R271869B-NCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
36 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
37 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
38 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
39 |
KM416RD8AD-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
40 |
KM418RD8AC-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
41 |
KM418RD8AD-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
42 |
MAX4074ALESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 5V/V, noniverting gain 6V/V, -3dB BW 71kHZ. |
MAXIM - Dallas Semiconductor |
43 |
MAX4074ALEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 5V/V, noniverting gain 6V/V, -3dB BW 71kHZ. |
MAXIM - Dallas Semiconductor |
44 |
MAX4075ALESA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 5V/V, noninverting gain 6V/V, -3dB BW 71kHz. |
MAXIM - Dallas Semiconductor |
45 |
MAX4075ALEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 5V/V, noninverting gain 6V/V, -3dB BW 71kHZ. |
MAXIM - Dallas Semiconductor |
46 |
NTMFS4849N |
Power MOSFET 30 V, 71 A, Single N-Channel, SO-8 FL |
ON Semiconductor |
47 |
PSMN075-100MSE |
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications |
Nexperia |
48 |
PSMN075-100MSE |
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications |
NXP Semiconductors |
49 |
REC10-7105DRWL |
10W DC/DC converter with 71V input, +-5/+-1000mA output |
Recom International Power |
50 |
REC10-7105DRWLZ |
10W DC/DC converter with 71V input, +-5/+-1000mA output |
Recom International Power |
51 |
REC10-7105SRWL |
10W DC/DC converter with 71V input, 5/2000mA output |
Recom International Power |
52 |
REC10-7105SRWLZ |
10W DC/DC converter with 71V input, 5/2000mA output |
Recom International Power |
53 |
REC10-7112DRWL |
10W DC/DC converter with 71V input, +-12/+-416mA output |
Recom International Power |
54 |
REC10-7112DRWLZ |
10W DC/DC converter with 71V input, +-12/+-416mA output |
Recom International Power |
55 |
REC10-7112SRWL |
10W DC/DC converter with 719V input, 12/830mA output |
Recom International Power |
56 |
REC10-7112SRWLZ |
10W DC/DC converter with 71V input, 12/830mA output |
Recom International Power |
57 |
REC10-7115DRWL |
10W DC/DC converter with 71V input, +-15/+-333mA output |
Recom International Power |
58 |
REC10-7115DRWLZ |
10W DC/DC converter with 71V input, +-15/+-333mA output |
Recom International Power |
59 |
REC10-7115SRWL |
10W DC/DC converter with 71V input, 15/670mA output |
Recom International Power |
60 |
REC10-7115SRWLZ |
10W DC/DC converter with 71V input, 15/670mA output |
Recom International Power |
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