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Datasheets for 71

Datasheets found :: 147
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No. Part Name Description Manufacturer
31 BTS 716 G High Side Switches Infineon
32 CASE 710-02 28-Pin Plastic package Motorola
33 CASE 714-02 Package Outline Dimensions Motorola
34 CASE 717-02 14-Pin Ceramic Flatpak package Motorola
35 CPH3456 N-Channel Power MOSFET, 20V, 3.5A, 71mOhm, Single CPH3 ON Semiconductor
36 DG12864 GRAPHIC LCD MODULE display format: 128x64; module size: 93.0x70.0x9.5; viewing size: 71.7x39.0; dot size: 0.48x0.48; controller: KS0108; Data International CO.LTD.
37 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
38 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
39 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
40 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
41 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
42 K4R271869B-NCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
43 K4R441869AM-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
44 K4R441869AN-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
45 KM416RD8AC-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
46 KM416RD8AD-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
47 KM418RD8AC-RK70 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
48 KM418RD8AD-RK70 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
49 MAX4074ALESA Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 5V/V, noniverting gain 6V/V, -3dB BW 71kHZ. MAXIM - Dallas Semiconductor
50 MAX4074ALEUK-T Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 5V/V, noniverting gain 6V/V, -3dB BW 71kHZ. MAXIM - Dallas Semiconductor
51 MAX4075ALESA Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 5V/V, noninverting gain 6V/V, -3dB BW 71kHz. MAXIM - Dallas Semiconductor
52 MAX4075ALEUA Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 5V/V, noninverting gain 6V/V, -3dB BW 71kHZ. MAXIM - Dallas Semiconductor
53 NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8 FL ON Semiconductor
54 PSMN075-100MSE N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications Nexperia
55 PSMN075-100MSE N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications NXP Semiconductors
56 REC10-7105DRWL 10W DC/DC converter with 71V input, +-5/+-1000mA output Recom International Power
57 REC10-7105DRWLZ 10W DC/DC converter with 71V input, +-5/+-1000mA output Recom International Power
58 REC10-7105SRWL 10W DC/DC converter with 71V input, 5/2000mA output Recom International Power
59 REC10-7105SRWLZ 10W DC/DC converter with 71V input, 5/2000mA output Recom International Power
60 REC10-7112DRWL 10W DC/DC converter with 71V input, +-12/+-416mA output Recom International Power


Datasheets found :: 147
Page: | 1 | 2 | 3 | 4 | 5 |



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